STTA1206G-TR

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0 255075100125150
0.50
0.75
1.00
1.25
1.50
1.75
2.00
IRM
S factor
Tj(°C)
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (Reference Tj=125°C).
0 25 50 75 100 125 150 175 200 225 250
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
IF=IF(av)
VFP(V)
90% CONFIDENCE Tj=125°C
dIF/dt(A/µs)
Fig. 8: Transient peak forward voltage versus
dI
F
/dt.
0 25 50 75 100 125 150 175 200 225 250
0
50
100
150
200
250
300
350
400
450
500
tfr(ns)
90% CONFIDENCE Tj=125°C
VFr=1.1*VF max.
IF=IF(av)
dIF/dt(A/µs)
Fig. 9: Forward recovery time versus dI
F
/dt.
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Fig. A : “FREEWHEEL” MODE.
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5 Watts
SWITCHING
LOSSES
in the diode
SWITCHING
LOSSES
in the tansistor
due to the diode
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
The TURBOSWITCH is especially designed to
provide the lowest overall power losses in any
“FREEWHEEL Mode” application (Fig.A)
considering both the diode and the companion
transistor, thus optimizing the overall performance
in the end application.
The way of calculating the power losses is given
below:
APPLICATION DATA
DIODE:
TURBOSWITCH
IL
LOAD
TRANSISTOR
SWITCHING
t
T
F=1/T =t/T
V
R
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Turn-on losses :
(in the transistor, due to the diode)
P5 =
VI SF
xdI dt
R
RM
F
××+××
2
32
6
()
+
× ××+×
VI IS F
xdI dt
RRML
F
()2
2
Turn-off losses (in the diode) :
P3 =
VI SF
xdI dt
R
RM
F
×××
2
6
P3 and P5 are suitable for power MOSFET and
IGBT
I
I
F
Rd
I
R
V
R
V
tO
V
F
V
Fig. B: STATIC CHARACTERISTICS
V
I
IL
t
TRANSISTOR
dI /dt
F
dI /dt
R
tbta
I
RM
VR
DIODE
I
V
t
trr = ta + tb S = tb / ta
Fig. C: TURN-OFF CHARACTERISTICS
I
F
V
F
V
Fp
1.1V
F
V
F
F
dI /dt
0
0t
t
I
Fmax
tfr
Fig. D: TURN-ON CHARACTERISTICS
Conduction losses :
P1=V
t0
.I
F(AV)
+R
d
.I
F
2
(RMS)
Reverse losses :
P2=V
R
.I
R
.(1-δ)
Turn-on losses :
P4 = 0.4 (V
FP
-V
F
).I
Fmax
.t
fr
.F
APPLICATION DATA (Cont’d)
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STTA1206G-TR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Rectifiers 12 Amp 600 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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