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Issue A.4 02/09
Page 2 of 5
Silicon Phototransistor and Photo Darlington
in Miniature 0805 SMD Package
OP500, OP501, OP500DA, OP501DA
Absolute Maximum Ratings (T
A
=25°C unless otherwise noted)
Storage Temperature Range -40
o
C to +100
o
C
Operating Temperature Range -25
o
C to +85
o
C
Lead Soldering Temperature
(1)
260° C
Collector-Emitter Voltage
OP500, OP501
OP500DA, OP501DA
30 V
35 V
Emitter-Collector Voltage 5 V
Power Dissipation
(2)
OP500, OP501
OP500DA, OP501DA
75 mW
100 mW
Collector Current
OP500, OP501
OP500DA, OP501DA
20 mA
32 mA
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 2.17 mW/° C above 25° C.
3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less
than 10% over the entire lens surface of the phototransistor being tested.
4. To calculate typical collector dark current in µA, use the formulate I
CEO
= 10
(0.04 t - ¾)
, where T
A
is the ambient temperature in ° C.
Electrical Characteristics (T
A
= 25°C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode
I
C(ON)
On-State Collector Current
OP500, OP501
OP500DA, OP501DA
0.1
10.0
-
-
-
-
mA
V
CE
= 5.0 V, E
E
= 0.15 mW/cm
2 (3)
V
CE
= 5.0 V, E
E
= 0.15 mW/cm
2 (3)
V
CE(SAT)
Collector-Emitter Saturation Voltage
OP500, OP501
OP500DA, OP501DA
-
-
-
-
0.3
1.0
V
I
C
= 100 µA, E
E
= 1.0 mW/cm
2 (3)
I
C
= 1 mA, E
E
= 0.15 mW/cm
2 (3)
I
CEO
Collector-Emitter Dark Current - - 100 nA V
CC
= 5.0 V
(4)
V
BR(CEO)
Collector-Emitter Breakdown Voltage
OP500, OP501
OP500DA, OP501DA
30
35
- - V I
C
= 100 µA, E
E
= 0
V
BR(ECO)
Emitter-Collector Breakdown Voltage
OP500, OP501
OP500DA, OP501DA
5
5
-
-
-
-
V
I
E
= 100 µA, E
E
= 0
I
C
= 100 µA, E
E
= 0
t
r,
t
f
Rise and Fall Times
OP500, OP501
OP500DA, OP501DA
-
15
50
-
60
µs
I
C
= 1 mA, R
L
= 1KΩ
I
C
= 1 mA, R
L
= 1KΩ
