Datasheet# MSC1034F
MSASC25W100K
MSASC25W100KR
100 Volts
25 Amps
Features
• Platinum schottky barrier
• Oxide passivated structure
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
•
Available as standard polarity (strap is anode: MSASC25W100K) and
reverse polarity (strap is cathode: MSASC25W100KR)
•
TXV-level screening (MSASC25W100KV) or S-level (MSASC25W100KS)
screening i.a.w. Microsemi internal procedure PS11.50 available
DESCRIPTION
SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage V
RRM
100 Volts
Working Peak Reverse Voltage V
RWM
100 Volts
DC Blocking Voltage V
R
100 Volts
Average Rectified Forward Current, Tc≤ 145°C
I
F(ave)
25 Amps
derating, forward current, Tc≥ 145°C
dI
F
/dT (3.3)
Amps/°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave I
FSM
280 Amps
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
I
RRM
2 Amp
Junction Temperature Range T
j
-65 to +175
°C
Storage Temperature Range T
stg
-65 to +175
°C
Thermal Resistance, Junction to Case: MSASC25W100K
MSASC25W100KR
θ
JC
0.85
0.95
°C/W
Maximum Ratings @ 25°C (unless otherwise specified)
Low Profile
Surface Mount
SCHOTTKY DIODE
Mechanical
Outline
ThinKe
™2
8700 E. Thomas Road
Scottsdale, AZ 85252
PH: (480) 941-6300
FAX: (480) 941-1503
