Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
l Lead-Free
Applications
l Battery Management
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
HEXFET
®
Power MOSFET
GDS
Gate Drain Source
S
D
G
TO-220AB
IRFB3407ZPbF
D
S
D
G
5.0m
max.
6.4m
I
D (Package Limited)
120A
Absolute Maximum Ratings
D
C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
D
C
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
DM
Pulsed Drain Current
D
C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
V/ns
J
Operating Junction and
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
AR
A
AR
Repetitive Avalanche Energy
mJ
Thermal Resistance
θJC
Junction-to-Case
–––
0.65
θCS
Case-to-Sink, Flat Greased Surface , TO-220
0.50 ––– °C/W
θJA
Junction-to-Ambient, TO-220
––– 62
See Fig. 14, 15, 21a, 21b
140
230
6.7
-55 to + 175
± 20
1.5
10lbf
in (1.1N m)
122
86
488
120
°C
A
300
IRFB3407ZPbF
1 www.irf.com © 2013 International Rectifier March 15, 2013
Ordering Information
IRFB3407ZPbF TO-220
Tube 50
IRFB3407ZPbF
Base part number Package Type
Standard Pack
Complete Part Number