© 1996 IXYS All rights reserved
TO-247 AD
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
V
CES
I
C25
V
CE(sat)
Low V
CE(sat)
IXGH 25 N120 1200 V 50 A 3 V
High speed IGBT IXGH
25 N120A 1200 V 50 A 4 V
Features
l
International standard package
JEDEC TO-247 AD
l
2nd generation HDMOS
TM
process
l
Low V
CE(sat)
- for low on-state conduction losses
l
MOS Gate turn-on
- drive simplicity
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
l
Capacitor discharge systems
l
Solid state relays
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
High power density
92783D (3/96)
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 1200 V
V
CGR
T
J
= 25°C to 150°C; R
GE
= 1 MΩ 1200 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C50A
I
C90
T
C
= 90°C25A
I
CM
T
C
= 25°C, 1 ms 100 A
SSOA V
GE
= 15 V, T
VJ
= 125°C, R
G
= 33 Ω I
CM
= 50 A
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V
CES
P
C
T
C
= 25°C 200 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
M
d
Mounting torque (M3) 1.13/10 Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
BV
CES
I
C
= 3 mA, V
GE
= 0 V 1200 V
V
GE(th)
I
C
= 250 µA, V
CE
= V
GE
2.5 6 V
I
CES
V
CE
= 0.8 • V
CES
T
J
= 25°C 250 µA
V
GE
= 0 V T
J
= 125°C1mA
I
GES
V
CE
= 0 V, V
GE
= ±20 V ±100 nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V 25N120 3 V
25N120A 4 V
