FDB86566-F085 N-Channel PowerTrench
®
MOSFET
©2016 Semiconductor Components Indus
tries, LLC.
August-2017, Rev. 2
Publication Order Number:
FDB86566-F085/D
1
FDB86566-F085
N-Channel PowerTrench
®
MOSFET
60 V, 110 A, 2.7 mΩ
Features
Typical R
DS(on)
= 2.2 mΩ at V
GS
= 10V, I
D
= 80 A
Typical Q
g(tot)
= 80 nC at V
GS
= 10V, I
D
= 80 A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Integrated Starter/Alternator
Primary Switch for 12V Systems
MOSFET Maximum Ratings T
J
= 25°C unless otherwise noted.
Symbol Parameter Ratings Units
V
DSS
Drain-to-Source Voltage 60 V
V
GS
Gate-to-Source Voltage ±20 V
I
D
Drain Current - Continuous (V
GS
=10) (Note 1) T
C
= 25°C 110
A
Pulsed Drain Current T
C
= 25°C See Figure 4
E
AS
Single Pulse Avalanche Energy (Note 2) 193 mJ
P
D
Power Dissipation 176 W
Derate Above 25
o
C1.2W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to + 175
o
C
R
θJC
Thermal Resistance, Junction to Case 0.85
o
C/W
R
θJA
Maximum Thermal Resistance, Junction to Ambient (Note 3) 43
o
C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDB86566
FDB86566-F085
D2-PAK(TO-263) 330mm 24mm 800 units
Notes:
1: Current is limited by bondwire configuration.
2: Starting T
J
= 25°C, L = 50uH, I
AS
= 88A, V
DD
= 60V during inductor charging and V
DD
= 0V during time in avalanche.
3: R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. R
θJC
is guaranteed by design, while R
θJA
is determined by the board design. The maximum rating
presented here is based on mounting on a 1 in
2
pad of 2oz copper.
G
S
D
D
G
S
TO-263
FDB SERIES