FDS6898A Rev C (W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 µA 20 V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C
21
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 16 V, V
GS
= 0 V 1
µA
I
GSSF
Gate–Body Leakage, Forward V
GS
= 12 V, V
DS
= 0 V 100
nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= –12 V, V
DS
= 0 V –100
nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 µA 0.5 1 1.5 V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, Referenced to 25°C
–3.5
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 4.5 V, I
D
= 9.4 A
V
GS
= 2.5 V, I
D
= 8.3 A
V
= 4.5 V, I
= 9.4 A,T
= 125°C
10
13
14
14
18
21
mΩ
I
D(on)
On–State Drain Current V
GS
= 4.5V, V
DS
= 5 V 19 A
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 9.4 A 47 S
Dynamic Characteristics
C
iss
Input Capacitance 1821 pF
C
oss
Output Capacitance 440 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
208 pF
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 10 20 ns
t
r
Turn–On Rise Time 15 27 ns
t
d(off)
Turn–Off Delay Time 34 55 ns
t
f
Turn–Off Fall Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6 Ω
16 29 ns
Q
g
Total Gate Charge 16 23 nC
Q
gs
Gate–Source Charge 3 nC
Q
gd
Gate–Drain Charge
V
DS
= 10 V, I
D
= 9.4 A,
V
GS
= 4.5 V
4 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current 1.3 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 1.3 A (Note 2) 0.7 1.2 V
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 78°C/W when
mounted on a 0.5in
2
pad of 2 oz copper
b) 125°C/W when
mounted on a 0.02
in
2
pad of 2 oz
copper
c) 135°C/W when mounted on a
minimum mounting pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied
