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MD2103DFX

P1-P3P4-P6P7-P9P10-P11
Electrical characteristics MD2103DFX
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2 Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%
Table 3. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
Collector cut-off current
(V
BE
=0)
V
CE
= 1500V
V
CE
= 1500V T
C
= 125°C
0.2
2
mA
mA
I
EBO
Emitter cut-off current
(I
C
=0)
V
EB
= 5V
50 125 mA
V
(BR)EBO
Emitter-base brakdown
voltage (I
C
= 0)
I
E
= 700mA
11 V
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= 3A _ _ I
B
=0.75A
1.8 V
V
BE(sat)
(1)
Base-emitter saturation
voltage
I
C
= 3A _ _ I
B
=0.75A
1.5 V
h
FE
(1)
DC current gain
I
C
= 1A V
CE
=5V
I
C
= 3A V
CE
=1V
I
C
= 3A V
CE
=5V
6.5
17
6
9.5
t
s
t
f
Inductive load
Storage time
Fall time
I
C
=3A f
h
=16kHz
I
B(on)
=0.5A V
BE(off)
=-2.7V
L
BB(off)
=6.3µH
(see Figure 9)
3.8
0.25
µs
µs
V
F
Diode forward voltage
I
F
= 3A
2V
Obsolete Product(s) - Obsolete Product(s)
MD2103DFX Electrical characteristics
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2.1 Electrical cMD2103DFXharacteristics (curves)
Figure 1. Safe operating area Figure 2. Derating curve
Figure 3. Output characteristics Figure 4. Reverse biased SOA
Figure 5. DC current gain Figure 6. DC current gain
Obsolete Product(s) - Obsolete Product(s)
Electrical characteristics MD2103DFX
6/11
Figure 7. Collector-emitter saturation
voltage
Figure 8. Base-emitter saturation
voltage
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P11

MD2103DFX

Mfr. #:
Buy MD2103DFX
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT HI VLT NPN PWR TRANS STANDARD DEF
Lifecycle:
New from this manufacturer.
Delivery:
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