750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
FEATURES
• Circular active area
• Ideal for electron detection
• 100% internal QE
• High speed
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS
Active Area
Responsivity, R
Reverse Breakdown Voltage, V
R
Capacitance, C
Rise Time
Dark Current
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient
1
Nitrogen or Vacuum
Maximum Junction Temperature
Lead soldering temperature
2
-10° TO 40°C
1
-20°C TO 80°C
70°C
260°C
1
Temperatures exceeding these parameters may create oxide growth on the active area.
Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised.
2
0.080" from case for 10 seconds.
Shipped with temporary cover to protect photodiode and wire bond.
Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover.
Dimensions are in inch [metric] units.
Ø9mm
(see graphs on next page)
I
R
= 1µA
V
R
= 0V
RL = 50Ω, V
R
= 2V
V
R
= 150V
160
63
10
2
100
mm
2
A/W
Volts
pF
nsec
nA
PHOTODIODE 63 mm
2
AXUV63HS1
Revision February 26, 2013
