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MUR180E

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 4
1 Publication Order Number:
MUR180E/D
MUR180E, MUR1100E
SWITCHMODE
Power Rectifiers
Ultrafast “E” Series with High Reverse
Energy Capability
These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
• 10 mjoules Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
• Ultrafast 75 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• Reverse Voltage to 1000 V
• These are Pb−Free Devices*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped in Plastic Bags; 1,000 per Bag
• Available Tape and Reel; 5,000 per Reel, by Adding a “RL’’ Suffix to
the Part Number
• Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MUR180E
MUR1100E
V
RRM
V
RWM
V
R
800
1000
V
Average Rectified Forward Current (Note 1)
(Square Wave Mounting Method #3 Per Note 3)
I
F(AV)
1.0 @
T
A
= 95°C
A
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz)
I
FSM
35 A
Operating Junction Temperature and Storage
Temperature Range
T
J
, T
stg
−65 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ULTRAFAST RECTIFIERS
1.0 AMPERES, 800−1000 VOLTS
http://onsemi.com
PLASTIC
AXIAL LEAD
CASE 59
MARKING DIAGRAM
A = Assembly Location
MUR1x0E = Device Code
x 8 or 10
Y = Year
WW = Work Week
G =Pb−Free Package
(Note: Microdot may be in either location)
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
A
MUR1x0E
YYWW G
G
MUR180E, MUR1100E
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristics Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Ambient
R
q
JA
See Note 3 °C/W
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 1.0 A, T
J
= 150°C)
(i
F
= 1.0 A, T
J
= 25°C)
v
F
1.50
1.75
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 100°C)
(Rated dc Voltage, T
J
= 25°C)
i
R
600
10
mA
Maximum Reverse Recovery Time
(I
F
= 1.0 A, di/dt = 50 Amp/ms)
(I
F
= 0.5 A, i
R
= 1.0 Amp, I
REC
= 0.25 A)
t
rr
100
75
ns
Maximum Forward Recovery Time
(I
F
= 1.0 A, di/dt = 100 Amp/ms, Recovery to 1.0 V)
t
fr
75 ns
Controlled Avalanche Energy (See Test Circuit in Figure 6) W
AVAL
10 mJ
Typical Peak Reverse Recovery Current
(I
F
= 1.0 A, di/dt = 50 A/ms)
I
RM
1.7 A
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Device Package Shipping
†
MUR180E Axial Lead*
1000 Units / Bag
MUR180EG Axial Lead*
MUR180ERL Axial Lead*
5000 / Tape & Reel
MUR180ERLG Axial Lead*
MUR1100E Axial Lead*
1000 Units / Bag
MUR1100EG Axial Lead*
MUR1100ERL Axial Lead*
5000 / Tape & Reel
MUR1100ERLG Axial Lead*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*These packages are inherently Pb−Free.
MUR180E, MUR1100E
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
0.3 0.90.5 1.3
3.0
0.01
0.03
0.02
0.2
0.1
20
2.0
0.7
0.3
0.05
0.5
5.0
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
2.3
V
R
, REVERSE VOLTAGE (VOLTS)
0 300200 500 600
1000
0.1
0.01
10
100
T
J
= 175°C
I
R
100 400 1000
Figure 2. Typical Reverse Current*
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
0
1.0
2.0
3.0
4.0
5.0
P
F(AV)
0
0.5 1.0 1.5 2.0 2.5
T
A
, AMBIENT TEMPERATURE (°C)
050
0
2.0
1.0
3.0
5.0
4.0
I
250
Figure 3. Current Derating
(Mounting Method #3 Per Note 3)
Figure 4. Power Dissipation
0
3.0
10
20
2.0
10 20
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
0.7
0.07
1.0
7.0
1.7 2.1
100°C
T
J
= 175°C
25°C
800 900700
1.0
, REVERSE CURRENT ( A)
100°C
25°C
150100 200
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if V
R
is sufficiently below rated V
R
.
C, CAPACITANCE (pF)
, AVERAGE POWER DISSIPATION (WATTS)
T
J
= 25°C
i
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
30 40 50
7.0
5.0
T
J
= 175°C
RATED V
R
R
q
JA
= 50°C/W
dc
SQUARE WAVE
m
(CAPACITIVELOAD)
I
PK
I
AV
+ 20
SQUARE WAVE
dc
5.010
1.1 1.5 1.9
10
P1-P3P4-P6

MUR180E

Mfr. #:
Buy MUR180E
Manufacturer:
ON Semiconductor
Description:
DIODE GEN PURP 800V 1A AXIAL
Lifecycle:
New from this manufacturer.
Delivery:
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