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IRF6717MTR1PBF

P1-P3P4-P6P7-P9
IRF6717MPbF
www.irf.com 7
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
Inductor Current
Circuit Layout Considerations
 Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
di/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
-
+
+
+
-
-
-
R
G
V
DD
D.U.T
DirectFET Board Footprint, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
G
S
S
IRF6717MPbF
8 www.irf.com
DirectFET Outline Dimension, MX Outline
(Medium Size Can, X-Designation).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DirectFET Part Marking
GATE MARKING
PART NUMBER
LOGO
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
CODE
A
B
C
D
E
F
G
H
J
K
L
M
P
0.017
0.028
0.007
0.040
0.095
0.156
0.028
0.018
0.028
MAX
0.250
0.201
0.38
0.59
0.08
0.88
2.28
3.85
0.68
0.35
0.68
MIN
6.25
4.80
0.42
0.70
0.17
1.02
2.42
3.95
0.72
0.45
0.72
MAX
6.35
5.05
0.015
0.023
0.003
0.090
0.035
0.152
0.027
0.027
0.014
MIN
0.189
0.246
METRIC IMPERIAL
DIMENSIONS
1.38
1.42
0.80 0.84
0.0560.054
0.0330.031
N 0.03 0.08 0.001 0.003
IRF6717MPbF
www.irf.com 9
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/12
DirectFET Tape & Reel Dimension (Showing component orientation).
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6717MTRPBF). For 1000 parts on 7"
reel, order IRF6717MTR1PBF
REEL DIMENSIONS
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
IMPERIAL
MIN
330.0
20.2
12.8
1.5
100.0
N.C
12.4
11.9
STANDARD OPTION (QTY 4800)
CODE
A
B
C
D
E
F
G
H
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
12.992
0.795
0.504
0.059
3.937
N.C
0.488
0.469
METRIC
MIN
6.9
0.75
0.53
0.059
2.31
N.C
0.47
0.47
TR1 OPTION (QTY 1000)
MAX
N.C
N.C
12.8
N.C
N.C
13.50
12.01
12.01
MIN
177.77
19.06
13.5
1.5
58.72
N.C
11.9
11.9
METRIC
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
IMPERIAL
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
IMPERIAL
MIN
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
1.60
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
METRIC
DIMENSIONS
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
0.063
P1-P3P4-P6P7-P9

IRF6717MTR1PBF

Mfr. #:
Buy IRF6717MTR1PBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors MOSFET 25V 1 N-CH HEXFET 1.25mOhms 46nC
Lifecycle:
New from this manufacturer.
Delivery:
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