© Semiconductor Components Industries, LLC, 2012
December, 2012 − Rev. 1
1 Publication Order Number:
NTTFS4C05N/D
NTTFS4C05N
Power MOSFET
30 V, 75 A, Single N−Channel, m8FL
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Power Load Switch
• Notebook Battery Management
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
19.4
A
T
A
= 85°C 14.5
Power Dissipation R
q
JA
(Note 1)
T
A
= 25°C P
D
2.16 W
Continuous Drain
Current R
q
JA
≤ 10 s
(Note 1)
T
A
= 25°C
I
D
28
A
T
A
= 85°C 21
Power Dissipation
R
q
JA
≤ 10 s (Note 1)
T
A
= 25°C P
D
4.5 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
12.0
A
T
A
= 85°C 8.9
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
0.82 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
75
A
T
C
= 85°C 56
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
33 W
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
174 A
Operating Junction and Storage Temperature T
J
,
T
stg
−55 to
+150
°C
Source Current (Body Diode) I
S
30 A
Drain to Source dV/dt dV/dt 6.0 V/ns
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V, I
L
= 41 A
pk
,
L = 0.1 mH, R
G
= 25 W) (Note 3)
E
AS
84 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at T
J
= 25°C,
V
GS
= 10 V, I
L
= 29 A, E
AS
= 42 mJ.
ORDERING INFORMATION
http://onsemi.com
Device Package Shipping
†
V
(BR)DSS
R
DS(on)
MAX I
D
MAX
30 V
3.6 mW @ 10 V
75 A
N−Channel MOSFET
D (5−8)
S (1,2,3)
G (4)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
5.1 mW @ 4.5 V
NTTFS4C05NTAG WDFN8
(Pb−Free)
1500 / Tape &
Reel
(Note: Microdot may be in either location)
1
4C05 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
1
NTTFS4C05NTWG WDFN8
(Pb−Free)
5000 / Tape &
Reel
4C05
AYWWG
G
D
D
D
D
S
S
S
G
