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BF904A,215

P1-P3P4-P6P7-P9P10-P12P13-P15
NXP Semiconductors Product specification
N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR
Fig.13 Drain current as a function of gate 1 supply
voltage (= V
GG
); typical values.
V
DS
= 5 V; V
G2-S
= 4 V; T
j
=25°C.
R
G1
= 120 kΩ (connected to V
GG
); see Fig.21.
handbook, halfpage
0
12
8
4
0
15
MLD275
234
I
D
(mA)
V (V)
GG
Fig.14 Drain current as a function of gate 1
(= V
GG
) and drain supply voltage;
typical values.
V
G2-S
= 4 V; T
j
=25°C.
R
G1
connected to V
GG
; see Fig.21.
handbook, halfpage
0
20
10
15
5
0
24 8
MLD274
6
V = V (V)
GG DS
I
D
(mA)
R = 47 kΩ
G1
68 kΩ
82 kΩ
100 kΩ
120 kΩ
150 kΩ
180 kΩ
220 kΩ
V
DS
= 5 V; T
j
=25°C.
R
G1
= 120 kΩ (connected to V
GG
); see Fig.21.
Fig.15 Drain current as a function of gate 2 voltage;
typical values.
handbook, halfpage
0246
12
0
MLD276
8
4
I
D
(mA)
4.5 V
4 V
3.5 V
3 V
V (V)
G2 S
V = 5 V
GG
Fig.16 Gate 1 current as a function of gate 2
voltage; typical values.
V
DS
= 5 V; T
j
=25°C.
R
G1
= 120 kΩ (connected to V
GG
); see Fig.21.
handbook, halfpage
0246
40
30
10
0
20
MLB945
I
G1
(µA)
V (V)
G2 S
4.5 V
4 V
3.5 V
3 V
V = 5 V
GG
Rev. 04 - 13 November 2007
7 of 15
NXP Semiconductors Product specification
N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR
Fig.17 Input admittance as a function of frequency;
typical values.
V
DS
= 5 V; V
G2
=4V.
I
D
= 10 mA; T
amb
=25°C.
handbook, halfpage
10
3
MLD277
10
2
10
10
1
10
2
10
1
y
is
(mS)
f (MHz)
b
is
g
is
Fig.18 Reverse transfer admittance and phase as
a function of frequency; typical values.
V
DS
= 5 V; V
G2
=4V.
I
D
= 10 mA; T
amb
=25°C.
10
3
MLD278
10
2
10
10
3
10
2
10
1
y
rs
10
3
10
10
1
2
rs
(µS)
f (MHz)
rs
y
rs
(deg)
ϕ
ϕ
Fig.19 Forward transfer admittance and phase as
a function of frequency; typical values.
V
DS
= 5 V; V
G2
=4V.
I
D
= 10 mA; T
amb
=25°C.
10
3
MLD279
10
2
10
1
10
2
10
1
10
10
2
y
fs
(mS)
y
fs
f (MHz)
fs
fs
(deg)
ϕ
ϕ
Fig.20 Output admittance as a function of
frequency; typical values.
V
DS
= 5 V; V
G2
=4V.
I
D
= 10 mA; T
amb
=25°C.
handbook, halfpage
MGL614
10
−1
10
1
10
−2
10
2
10 10
3
y
os
(mS)
f (MHz)
b
os
g
os
Rev. 04 - 13 November 2007
8 of 15
NXP Semiconductors Product specification
N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR
Fig.21 Cross-modulation test set-up.
DUT
V
AGC
C1
4.7 nF
R1
10 kΩ
MLD171
C4
4.7 nF
L1
450 nH
C3 12 pF
R
L
50 Ω
≈
V
GG
V
DS
R
GEN
50
V
I
R2
50
4.7 nF
C2
R
G1
Ω
Ω
Rev. 04 - 13 November 2007
9 of 15
P1-P3P4-P6P7-P9P10-P12P13-P15

BF904A,215

Mfr. #:
Buy BF904A,215
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors Dual N-Channel 7V 30mA 200mW
Lifecycle:
New from this manufacturer.
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