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74LX1G132CTR
P1-P3
P4-P6
P7-P9
P10-P11
74LX1G
132
4/1
1
DC SPECIFICATIONS
Sym
bol
Par
amet
er
T
est Con
dition
V
a
lue
Unit
V
CC
(V)
-40 to 85
°C
-55 to 12
5 °C
Min.
Max.
Min.
M
ax.
V
T+
Positiv
e Input
thresh
old
1.65
0.79
1.16
0.79
1.16
V
2.3
1.1
1
1.5
6
1.1
1
1.
56
3
1.5
1.87
1.5
1.
87
4.5
2.16
2.74
2.16
2.74
5.5
2.61
3.3
3
2.61
3.
33
V
T-
Negati
ve Inp
ut
thresh
old
1.65
0.39
0.62
0.39
0.62
V
2.3
0.58
0.8
7
0.58
0.
87
3
0.84
1.1
4
0.84
1.
14
4.5
1.41
1.7
9
1.41
1.
79
5.5
1.87
2.2
9
1.87
2.
29
V
H
Hyster
esis Voltage
1.65
0.37
0.6
2
0.37
0.
62
V
2.3
0.48
0.7
7
0.48
0.
77
3
0.56
0.8
7
0.56
0.
87
4.5
0.71
1.0
4
0.71
1.
04
5.5
0.71
1
.1
1
0.71
1.1
1
V
OH
High L
evel O
utput
Voltage
1.65 t
o 4.5
I
O
=-100
µ
AV
CC
-0.1
V
CC
-0.1
V
1.65
I
O
=-4 mA
1.2
1.
2
2.3
I
O
=-8 mA
1.9
1.
9
3.0
I
O
=-1
6 mA
2.4
2.
4
I
O
=-2
4 mA
2.2
2.
2
4.5
I
O
=-3
2 mA
3.8
3.
8
V
OL
Low
Lev
el
Out
put
Voltage
1.65 t
o 4.5
I
O
=100
µ
A
0.1
0.1
V
1.65
I
O
=4 m
A
0.45
0.45
2.3
I
O
=8 m
A
0.3
0.3
3.0
I
O
=16
mA
0.4
0.4
I
O
=24
mA
0.55
0.55
4.5
I
O
=32
mA
0.55
0.55
I
I
Input L
eakage
Curren
t
1.65 t
o 5.5
V
I
= 0 to 5.
5V
±
10
±
10
µ
A
I
of
f
Power
Of
f Leak
age
Curren
t
0
V
I
or V
O
=5
.
5
V
10
10
µ
A
I
CC
Quiesc
ent Supply
Curren
t
1.65 t
o 5.5
V
I
=V
CC
or GN
D
10
10
µ
A
74LX1G
132
5/11
AC ELECTRICAL CHARACTERISTICS
(Input t
r
=t
f
=3
n
s
)
CAPACITIVE CHARACTERISTICS
1)
C
PD
is def
ined as the
value of th
e IC’s int
ernal eq
uivalent
capa
citan
ce
whi
ch is calc
ulate
d f
rom t
he oper
ating cur
rent con
sumpt
ion with
out
lo
ad. (R
efer t
o Tes
t Circ
uit).
A
v
er
age ope
ratin
g cu
rrent c
an
be ob
tained
by
the
foll
owing
equa
tion.
I
CC(opr)
=C
PD
xV
CC
xf
IN
+I
CC
Symbol
Param
eter
T
est Co
ndition
V
alu
e
Unit
V
CC
(V)
C
L
(pF)
R
L
(
Ω
)
t
s
=
t
r
(ns)
-
4
0t
o8
5°
C
-
5
5t
o1
2
5°
C
Min.
Max.
Min.
Max.
t
PLH
t
PHL
Propagatio
n Del
ay
Tim
e
1.65 to
1.95
15
1M
Ω
3.0
2
12.0
2
12.0
ns
2.3 to 2.7
2
7.0
2
7.0
3.0 to 3.6
1
6.0
1
6.0
4.5 to 5.5
1
5.5
1
5.5
1.65 to
1.95
30
10
00
2.0
2
1
1.0
2
1
1.0
2.3 to 2.7
30
500
2.0
2
6.5
2
6.5
2.7
50
500
2.5
1
6.5
1
6.5
3.0 to 3.6
50
500
2.5
1
5.5
1
5.5
4.5 to 5.5
50
500
2.5
1
5.0
1
5.0
Symbol
Parameter
T
est Co
ndition
V
a
lue
Unit
V
CC
(V)
T
A
=2
5°
C
Min.
T
yp.
Max.
C
IN
Input Capacitanc
e
05
p
F
C
PD
Power Dissipatio
n Capacitance
(note 1)
1.8
f
IN
=1
0
M
H
z
2
0
pF
2.5
21
3.3
22
74LX1G
132
6/1
1
TEST CIRCUIT
R
T
=Z
OUT
of
pul
se gene
rato
r (typ
icall
y 50
Ω
)
TEST CIRCUIT AND WAVEFORM SYMBOL VALUE
WAV
E
FORM: PROPAGATION DELAY
(f
=1MHz;
5
0%
du
t
y c
ycle)
Symbol
V
CC
1.65 to 1
.95V
2.3 to 2.
7V
2.7 to 5.5
V
C
L
15pF/30
pF
15pF/30
pF
15pF/50p
F
R
L
1M
Ω/
10
00
Ω
1M
Ω/
500
Ω
1M
Ω/
500
Ω
V
IH
V
CC
V
CC
V
CC
V
M
V
CC
/2
V
CC
/2
V
CC
/2
t
r
=t
r
<2.0ns
<2.0ns
<2.5ns
P1-P3
P4-P6
P7-P9
P10-P11
74LX1G132CTR
Mfr. #:
Buy 74LX1G132CTR
Manufacturer:
STMicroelectronics
Description:
Logic Gates Single 2-Input NAND
Lifecycle:
New from this manufacturer.
Delivery:
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