VS-ETF075Y60U
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Vishay Semiconductors
Revision: 16-Jun-16
10
Document Number: 94685
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Fig. 23 - Typical Q2 - Q3 Trench IGBT Gate Threshold Voltage
Fig. 24 - Typical Q2 - Q3 Trench IGBT Zero Gate Voltage
Collector Current
Fig. 25 - Typical Q2 - Q3 Trench IGBT Energy Loss vs. I
C
(with Freewheeling External TO-247 Diode Discrete 30ETH06),
T
J
= 125 °C, V
CC
= 300 V, R
g
= 4.7 V
GE
= 15 V, L = 500 μH
Fig. 26 - Typical Q2 - Q3 Trench IGBT Switching Time vs. I
C
(with Freewheeling External TO-247 Diode Discrete 30ETH06),
T
J
= 125 °C, V
CC
= 300 V, R
g
= 4.7 V
GE
= 15 V, L = 500 μH
Fig. 27 - Typical Q2 - Q3 Trench IGBT Energy Loss vs. R
g
(with Freewheeling External TO-247 Diode Discrete 30ETH06),
T
J
= 125 °C, V
CC
= 300 V, I
C
= 75 A, V
GE
= 15 V, L = 500 μH
Fig. 28 - Typical Q2 - Q3 Trench IGBT Switching Time vs. R
g
(with Freewheeling External TO-247 Diode Discrete 30ETH06),
T
J
= 125 °C, V
CC
= 300 V, I
C
= 75 A, V
GE
= 15 V, L = 500 μH
V
GEth
(V)
I
C
(mA)
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
T
J
= 25 °C
T
J
= 125 °C
V
CES
(V)
I
CES
(mA)
0.00001
0.0001
0.001
0.01
0.1
1
10
100 200 300 400 500 600
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
T
J
= 175 °C
I
C
(A)
Energy (mJ)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 1020304050607080
E
off
E
on
Switching Time (ns)
I
C
(A)
10
100
1000
0 1020304050607080
t
don
t
doff
t
t
f
R
g
(Ω)
Energy (mJ)
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0 5 10 15 20 25 30 35 40 45 50
Eoff
Eon
Switching Time (ns)
R
g
(Ω)
10
100
1000
0 5 10 15 20 25 30 35 40 45 50 55
t
don
t
doff
t
r
t
f
