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S85BR

P1-P2
V
RRM
= 100 V - 1600 V
I
F
=85 A
Features
• High Surge Capability DO-5 Package
• Types up to 1600 V V
RRM
Parameter Symbol S85B (R) S85D (R) Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
100 200 V
S85B thru S85JR
S85J (R)
400
S85G (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Standard
Recover
y
Diode
Conditions
600
pp g
RMS reverse voltage
V
RMS
70 140 V
DC blocking voltage
V
DC
100 200 V
Continuous forward current
I
F
85 85 A
Operating temperature
T
j
-65 to 180 -65 to 180 °C
Storage temperature
T
stg
-65 to 180 -65 to 180 °C
Parameter Symbol S85B (R) S85D (R) Unit
Diode forward voltage 1.1 1.1
10 10 μA
15 15 mA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
0.65 0.65 °C/W
15
A1800
Reverse current
I
R
V
F
1800
V
R
= 100 V, T
j
= 25 °C
I
F
= 85 A, T
j
= 25 °C
T
C
≤ 140 °C
Conditions
280
1800 1800
-65 to 180
85 85
-65 to 180
S85J (R)
10 10
S85G (R)
0.65
V
R
= 100 V, T
j
= 180 °C
0.65
1.1 1.1
9
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-65 to 180 -65 to 180
T
C
= 25 °C, t
p
= 8.3 ms
420
600400
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
www.genesicsemi.com
1
S85B thru S85JR
www.genesicsemi.com
2
P1-P2

S85BR

Mfr. #:
Buy S85BR
Manufacturer:
GeneSiC Semiconductor
Description:
Rectifiers 100V 85A REV Leads Std. Recovery
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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