SI3447BDV-T1-E3

Vishay Siliconix
Si3447BDV
Document Number: 72020
S09-0702-Rev. C, 27-Apr-09
www.vishay.com
1
P-Channel 12-V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET
®
Power MOSFET: 1.8 V Rated
Ultra Low On-Resistance
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Load Switch
PA Switch
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 12
0.040 at V
GS
= - 4.5 V
- 6.0
0.053 at V
GS
= - 2.5 V
- 5.2
0.072 at V
GS
= - 1.8 V
- 4.5
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
Ordering Information:
Marking Code: B7xxx
Si3447BDV-T1-E3 (Lead (Pb)-free)
Si3447BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
- 12
V
Gate-Source Voltage
V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 6.0 - 4.5
A
T
A
= 85 °C
- 4.3 - 3.3
Pulsed Drain Current
I
DM
- 20
Continuous Source Current (Diode Conduction)
a
I
S
- 1.7 - 0.9
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
2.0 1.1
W
T
A
= 85 °C
1.0 0.6
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t 5 s
R
thJA
50 62.5
°C/W
Steady State 90 110
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
30 36
www.vishay.com
2
Document Number: 72020
S09-0702-Rev. C, 27-Apr-09
Vishay Siliconix
Si3447BDV
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 0.45 1 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 8 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 12 V, V
GS
= 0 V
- 1
µA
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 85 °C
- 5
On-State Drain Current
a
I
D(on)
V
DS
= - 5 V, V
GS
= - 4.5 V
- 20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 6.0 A
0.033 0.040
Ω
V
GS
= - 2.5 V, I
D
= - 5.2 A
0.044 0.053
V
GS
= - 1.8 V, I
D
= - 2.0 A
0.060 0.072
Forward Transconductance
a
g
fs
V
DS
= - 5 V, I
D
= - 6.0 A
15 S
Diode Forward Voltage
a
V
SD
I
S
= - 1.7 A, V
GS
= 0 V
- 0.7 - 1.2 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 6.0 A
9.3 14
nCGate-Source Charge
Q
gs
1.5
Gate-Drain Charge
Q
gd
2.6
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 6 V, R
L
= 6 Ω
I
D
- 1 A, V
GEN
= - 4.5 V, R
g
= 6 Ω
20 30
ns
Rise Time
t
r
46 70
Turn-Off Delay Time
t
d(off)
62 95
Fall Time
t
f
62 95
Source-Drain Reverse Recovery Time
t
rr
I
F
= - 1.7 A, dI/dt = 100 A/µs
40 80
Output Characteristics
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
1.5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
1 V
2 V
V
GS
= 5 V thru 2.5 V
Transfer Characteristics
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5
T
C
= - 55 °C
125 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
Document Number: 72020
S09-0702-Rev. C, 27-Apr-09
www.vishay.com
3
Vishay Siliconix
Si3447BDV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.00
0.04
0.08
0.12
0.16
0.20
048121620
V
GS
= 1.8 V
V
GS
= 2.5 V
V
GS
= 4.5 V
I
D
- Drain Current (A)
R
DS(on)
- On-Resistance (Ω)
0
1
2
3
4
5
0246810
V
DS
= 6 V
I
D
= 6 A
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T
J
= 150 °C
40
10
1
T
J
= 25 °C
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
200
400
600
800
1000
1200
1400
1600
024681012
C
rss
C
oss
C
iss
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
0.8
0.9
1.0
1.1
1.2
1.3
1.4
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 6 A
R
DS(on)
- On-Resistance
(Normalized)
T
J
- Junction Temperature (°C)
0.00
0.04
0.08
0.12
0.16
0.20
012345
I
D
= 6 A
I
D
= 2 A
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-Resistance (Ω)

SI3447BDV-T1-E3

Mfr. #:
Manufacturer:
Vishay
Description:
IGBT Transistors MOSFET 12V 5.2A 2W
Lifecycle:
New from this manufacturer.
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