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PHK4NQ20T,518
P1-P3
P4-P6
P7-P9
P10-P12
Philips Semiconductors
PHK4NQ20T
T
renchMOS™ standard level FET
Product data
Rev
. 01 — 20 January 2003
7 of 12
9397 750 10773
© Koninklijk
e Philips Electronics N.V
. 2003. All r
ights reserved.
I
D
= 1 mA; V
DS
=V
GS
T
j
=2
5
°
C; V
DS
=5V
Fig 9.
Gate-source threshold v
oltage as a function of
junction temperature.
Fig 10.
Sub-threshold drain current as a function of
gate-source v
oltage.
T
j
=2
5
°
C and 150
°
C; V
GS
=0V
V
GS
= 0 V
; f = 1 MHz.
Fig 11.
Source (diode f
orward) current as a function of
source-drain (diode f
orward) v
oltage; typical
values.
Fig 12.
Input,
output
and
rever
se transf
er capacitances
as a function of drain-source v
oltage; typical
values.
03aa32
0
1
2
3
4
5
-60
0
60
120
180
T
j
(
°
C)
V
GS
(th)
(V
)
max
mi
n
typ
03aa35
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
02
46
V
GS
(V
)
I
D
(A
)
max
typ
mi
n
003aaa240
0
1
2
3
4
0
0
.2
0.4
0.6
0
.8
1
(A
)
I
S
V
SD
(V)
T
j
= 150
°
C
25
°
C
003aaa239
10
10
2
10
3
10
4
10
-1
1
10
10
2
V
DS
(V
)
C
(pF
)
C
iss
C
oss
C
rss
Philips Semiconductors
PHK4NQ20T
T
renchMOS™ standard level FET
Product data
Rev
. 01 — 20 January 2003
8 of 12
9397 750 10773
© Koninklijk
e Philips Electronics N.V
. 2003. All r
ights reserved.
I
D
= 4 A; V
DD
= 100 V
Fig 13.
Gate-source v
oltage as a function of gate char
ge; typical values.
003aaa241
0
2
4
6
8
10
01
0
2
0
3
0
Q
G
(nC)
V
GS
(V
)
Philips Semiconductors
PHK4NQ20T
T
renchMOS™ standard level FET
Product data
Rev
. 01 — 20 January 2003
9 of 12
9397 750 10773
© Koninklijk
e Philips Electronics N.V
. 2003. All r
ights reserved.
6.
P
ac
kage outline
Fig 14.
SO
T96-1 (SO8).
UNIT
A
max.
A
1
A
2
A
3
b
p
cD
(1)
E
(2)
(1)
eH
E
LL
p
QZ
y
w
v
θ
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
inches
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
0.7
0.6
0.7
0.3
8
0
o
o
0.25
0.1
0.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
1.0
0.4
SOT96-1
X
w
M
θ
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v
M
A
(A )
3
A
4
5
pin 1 index
1
8
y
076E03
MS-012
0.069
0.010
0.004
0.057
0.049
0.01
0.019
0.014
0.0100
0.0075
0.20
0.19
0.16
0.15
0.050
0.244
0.228
0.028
0.024
0.028
0.012
0.01
0.01
0.041
0.004
0.039
0.016
0
2.5
5 mm
scale
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
97-05-22
99-12-27
P1-P3
P4-P6
P7-P9
P10-P12
PHK4NQ20T,518
Mfr. #:
Buy PHK4NQ20T,518
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 200V 4A SOT96-1
Lifecycle:
New from this manufacturer.
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