NBXDBA009
http://onsemi.com
3
Table 6. DC CHARACTERISTICS (V
DD
= 3.3 V ± 10%, GND = 0 V, T
A
= −40°C to +85°C) (Note 2)
Symbol
Characteristic Conditions Min. Typ. Max. Units
I
DD
Power Supply Current 79 100 mA
V
IH
OE and FSEL Input HIGH Voltage 2000 V
DD
mV
V
IL
OE and FSEL Input LOW Voltage GND − 300 800 mV
I
IH
Input HIGH Current OE
FSEL
−100
−100
+100
+100
mA
I
IL
Input LOW Current OE
FSEL
−100
−100
+100
+100
mA
V
OH
Output HIGH Voltage
V
DD
= 3.3 V
V
DD
−1195
2105
V
DD
−945
2355
mV
V
OL
Output LOW Voltage
V
DD
= 3.3 V
V
DD
−1945
1355
V
DD
−1600
1700
mV
V
OUTPP
Output Voltage Amplitude 660 mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Measurement taken with outputs terminated with 50 ohm to V
DD
−2 V. See Figure 5.
Table 7. AC CHARACTERISTICS (V
DD
= 3.3 V ± 10%, GND = 0 V, T
A
= −40°C to +85°C) (Note 3)
Symbol Characteristic Conditions Min. Typ. Max. Units
f
CLKOUT
Output Clock Frequency
FSEL = HIGH 75
MHz
FSEL = LOW 150
Df
Frequency Stability − NBXDBA009 (Note 4) ±50 ppm
F
NOISE
Phase−Noise Performance 100 Hz of Carrier −108/−102 dBc/Hz
f
CLKout
= 75 MHz/150 MHz
(See Figures 3 and 4)
1 kHz of Carrier −122/−11 6 dBc/Hz
10 kHz of Carrier −129/−122 dBc/Hz
100 kHz of Carrier −129/−122 dBc/Hz
1 MHz of Carrier −137/−131 dBc/Hz
10 MHz of Carrier −161/−158 dBc/Hz
t
jit
(F)
RMS Phase Jitter 12 kHz to 20 MHz 0.4 0.9 ps
t
jitter
Cycle to Cycle, RMS 1000 Cycles 2.3 8 ps
Cycle to Cycle, Peak−to−Peak 1000 Cycles 13 30 ps
Period, RMS 10,000 Cycles 1.3 4 ps
Period, Peak−to−Peak 10,000 Cycles 8.7 20 ps
t
OE/OD
Output Enable/Disable Time 200 ns
t
DUTY_CYCLE
Output Clock Duty Cycle
(Measured at Cross Point)
48 50 52 %
t
R
Output Rise Time (20% and 80%) 250 400 ps
t
F
Output Fall Time (80% and 20%) 250 400 ps
t
start
Start−up Time 1 5 ms
Aging
1
st
Year 3 ppm
Every Year After 1
st
1 ppm
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Measurement taken with outputs terminated with 50 ohm to V
DD
−2 V. See Figure 5.
4. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration, and first year aging.