© 2014 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXY_50N65C3D1(5D) 9-03-14
IXYH50N65C3D1
Fig. 23. Diode Forward Characteristics
0
20
40
60
80
100
120
00.511.5 22.533.5
V
F
(V)
I
F
(A)
T
J
= 150ºC
T
J
= 25ºC
Fig. 24. Reverse Recovery Charge vs. -di
F
/dt
0.8
1.0
1.2
1.4
1.6
1.8
2.0
200 300 400 500 600 700 800 900 1000 1100 1200
-di
F
/ dt (A/µs)
Q
RR
(µC)
T
VJ
= 150ºC
V
R
= 400V
I
F
= 60A
15A
30A
Fig. 25. Reverse Recovery Current vs. -di
F
/dt
10
12
14
16
18
20
22
24
26
28
30
32
200 300 400 500 600 700 800 900 1000 1100 1200
di
F
/dt (A/µs)
I
RR
(A)
T
VJ
= 150ºC
V
R
= 400V
15A
30A
I
F
= 60A
Fig. 26. Reverse Recovery Time vs. -di
F
/dt
60
80
100
120
140
160
180
200 300 400 500 600 700 800 900 1000 1100 1200
-di
F
/dt (A/µs)
t
RR
(ns)
T
VJ
= 150ºC
V
R
= 400V
30A
15A
I
F
= 60A
Fig. 28. Maximum Transient Thermal Impedance (Diode)
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Z
(th)JC
(ºC / W)
Fig. 27. Dynamic Parameters Q
RR,
I
RR
vs.
Junction Temperature
0
0.2
0.4
0.6
0.8
1
1.2
0 20 40 60 80 100 120 140 160
T
J
(ºC)
K
F
K
F
I
RR
K
F
Q
RR
V
R
= 400V
I
F
= 30A
-dI
F
/dt = 500 A/µs
