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VT30L60CHM3/4W

P1-P3P4-P5
VT30L60C, VIT30L60C
www.vishay.com
Vishay General Semiconductor
Revision: 15-Dec-16
1
Document Number: 89438
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.32 V at I
F
= 5.0 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 15 A
V
RRM
60 V
I
FSM
200 A
V
F
at I
F
= 15 A 0.45 V
T
J
max. 150 °C
Package TO-220AB, TO-262AA
Diode variation Dual common cathode
TO-220AB
1
2
3
1
K
2
3
TO-262AA
TMBS
®
PIN 1
PIN 2
PIN 3
K
PIN 1
PIN 2
CASE
PIN 3
VT30L60C VIT30L60C
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT30L60C VIT30L60C UNIT
Maximum repetitive peak reverse voltage V
RRM
60 V
Maximum average forward rectified current
(fig. 1)
per device
I
F(AV)
30
A
per diode 15
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
200 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
VT30L60C, VIT30L60C
www.vishay.com
Vishay General Semiconductor
Revision: 15-Dec-16
2
Document Number: 89438
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
I
F
= 5.0 A
T
A
= 25 °C
V
F
(1)
0.43 -
V
I
F
= 7.5 A 0.46 -
I
F
= 15 A 0.51 0.60
I
F
= 5.0 A
T
A
= 125 °C
0.32 -
I
F
= 7.5 A 0.36 -
I
F
= 15 A 0.45 0.57
Reverse current per diode V
R
= 60 V
T
A
= 25 °C
I
R
(2)
-4.0
mA
T
A
= 125 °C 27 110
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT30L60C VIT30L60C UNIT
Typical thermal resistance
per diode
R
JC
1.8
°C/W
per device 0.8
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB VT30L60C-M3/4W 1.89 4W 50/tube Tube
TO-262AA VIT30L60C-M3/4W 1.46 4W 50/tube Tube
TO-220AB VT30L60CHM3/4W
(1)
1.89 4W 50/tube Tube
TO-262AA VIT30L60CHM3/4W
(1)
1.46 4W 50/tube Tube
VT30L60C, VIT30L60C
www.vishay.com
Vishay General Semiconductor
Revision: 15-Dec-16
3
Document Number: 89438
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Transient Thermal Impedance Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
Case Temperature (°C)
Average Forward Rectified Current (A)
35
30
25
15
5
0
0 25 50 75 125 150
10
100
20
0
1
7
8
9
10
024 8 1618
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
12
D = t
p
/T t
p
T
2
3
4
6
5
14610
Instantaneous Forward Voltage (V)
0 0.1 0.3 0.6 0.8
100
10
1
0.1
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
0.5 0.7
Instantaneous Forward Current (A)
0.2 0.4
20 40 60 80 100
10
0.1
0.01
0.001
1000
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
1
100
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
10
0.1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Junction to Case
1
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

VT30L60CHM3/4W

Mfr. #:
Buy VT30L60CHM3/4W
Manufacturer:
Vishay
Description:
DIODE ARRAY SCHOTTKY 60V TO220AB
Lifecycle:
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