IRF7702

IRF7702
4 www.irf.com
PROVISIONAL
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Threshold Voltage Vs. Temperature
1 10 100
0
1000
2000
3000
4000
5000
-V , Drain-to-Source Volta
g
e (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
g
s
d , ds
rss
g
d
oss ds
g
d
C
iss
C
oss
C
rss
0 20 40 60 80
0
2
4
6
8
10
Q , Total Gate Char
g
e (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-8.0A
V =-9.6V
DS
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
0.20
0.40
0.60
0.80
-V
GS(th)
, Variace ( V )
I
D
= -250µA
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Volta
g
e (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
IRF7702
www.irf.com 5
PROVISIONAL
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Typical Power Vs. Time
25 50 75 100 125 150
0.0
2.0
4.0
6.0
8.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.01 0.10 1.00 10.00 100.00
Time (sec)
0
10
20
30
40
Power (W)
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7702
6 www.irf.com
PROVISIONAL
Fig 13. Typical On-Resistance Vs. Drain
Current
Fig 14. Typical On-Resistance Vs. Gate
Voltage
Fig 12. Normalized On-Resistance
Vs. Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-8.0A
1.5 2.5 3.5
-V
GS,
Gate -to -Source Voltage (V)
0.010
0.015
0.020
R
DS(on)
, Drain-to -Source On Resistance (
)
I
D
= -8.0A
0 20406080100
-I
D
, Drain Current (A)
0.00
0.04
0.08
0.12
0.16
0.20
R
DS (on)
, Drain-to-Source On Resistance (
)
V
GS
= -2.5V
V
GS
= -4.5V

IRF7702

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 12V 8A 8-TSSOP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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