VS-150U(R).. Series
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Vishay Semiconductors
Revision: 30-May-16
2
Document Number: 93490
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Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature
I
F(AV)
180° conduction, half sine wave
150 A
125 °C
Maximum RMS forward current I
F(RMS)
DC at 110 °C 235
A
Maximum peak, one cycle forward, non-repetitive
surge current
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
3000
t = 8.3 ms 3140
Maximum I
2
t for fusing I
2
t
t = 10 ms 45
kA
2
s
t = 8.3 ms 41
Slope resistance r
f
T
J
= T
J
maximum 0.97 m
Threshold voltage V
F(T0)
0.80
V
Maximum forward voltage drop V
FM
I
pk
= 600 A, T
J
= 25 °C, t
p
= 10 ms sinusoidal wave 1.47
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating and storage
temperature range
T
J
, T
Stg
-40 to +180 °C
Maximum thermal resistance, junction to case R
thJC
DC operation 0.3
K/W
Maximum thermal resistance, case to heatsink R
thCS
Mounting surface, smooth, flat and greased 0.1
Maximum allowable mounting torque + 0 - 20 %
Not lubricated threads tighting on hexagon 17
N · m
Lubricated threads tighting on hexagon 14.5
Not lubricated threads tighting on nut 14
Lubricated threads tighting on nut 12
Approximate weight 130 g
Case style See dimensions - link at the end of datasheet DO-205AA (DO-8)
R
thJC
CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.031 0.023
T
J
= T
J
maximum K/W
120° 0.038 0.040
90° 0.048 0.053
60° 0.071 0.075
30° 0.120 0.121
