IXGH30N60BD1 Datasheet IXGH30N60BD1 | P1-P3

1 - 5

C (TAB)

G = Gate, C = Collector,

E = Emitter, TAB = Collector

G

C

E

TO-247 AD

(IXGH)

98510C (7/00)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

BV

CES

I

C

= 250mA, V

GE

= 0 V 600 V

V

GE(th)

I

C

= 250 mA, V

CE

= V

GE

2.5 5.0 V

I

CES

V

CE

= 0.8 • V

CES

T

J

= 25°C 200 mA

V

GE

= 0 V T

J

= 150°C3mA

I

GES

V

CE

= 0 V, V

GE

= ±20 V ±100 nA

V

CE(sat)

I

C

= I

C90

, V

GE

= 15 V 1.8 V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 600 V

V

CGR

T

J

= 25°C to 150°C; R

GE

= 1 MW 600 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C60A

I

C90

T

C

= 90°C30A

I

CM

T

C

= 25°C, 1 ms 120 A

SSOA V

GE

= 15 V, T

VJ

= 125°C, R

G

= 10 W I

CM

= 60 A

(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 V

CES

P

C

T

C

= 25°C 200 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

Maximum Lead and Tab temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

M

d

Mounting torque, TO-247 AD 1.13/10 Nm/lb.in.

Weight TO-247 AD 6 g

TO-268 4 g

HiPerFAST

TM

IGBT

with Diode

TO-268

(IXGT)

G

E

C (TAB)

Features

• International standard package

• Moderate frequency IGBT and

antiparallel FRED in one package

• High current handling capability

• Newest generation HDMOS

TM

process

• MOS Gate turn-on

- drive simplicity

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptible power supplies (UPS)

• Switch-mode and resonant-mode

power supplies

Advantages

• Space savings (two devices in one

package)

• High power density

• Optimized V

ce(sat)

and switching

speeds for medium frequency

application

V

CES

= 600 V

I

C25

= 60 A

V

CE(sat)

= 1.8 V

t

fi(typ)

= 100 ns

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH 30N60BD1

IXGT 30N60BD1

2 - 5

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

I

C

= I

C90

; V

CE

= 10 V, 25 S

Pulse test, t £ 300 ms, duty cycle £ 2 %

C

ies

2700 pF

C

oes

V

CE

= 25 V, V

GE

= 0 V, f = 1 MHz 240 pF

C

res

50 pF

Q

g

110 nC

Q

ge

I

C

= I

C90

, V

GE

= 15 V, V

CE

= 0.5 V

CES

22 nC

Q

gc

40 nC

t

d(on)

25 ns

t

ri

30 ns

t

d(off)

130 220 ns

t

fi

100 190 ns

E

off

1.0 2.0 mJ

t

d(on)

25 ns

t

ri

35 ns

E

on

1.0 mJ

t

d(off)

200 ns

t

fi

230 ns

E

off

2.5 mJ

R

thJC

0.62 K/W

R

thCK

(TO-247 AD) 0.25 K/W

Reverse Diode (FRED) Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

V

F

I

F

= I

C90

, V

GE

= 0 V, Pulse test T

J

= 150°C 1.6 V

t £ 300 ms, duty cycle d £ 2 % 2.5 V

I

RM

I

F

= I

C90

, V

GE

= 0 V, -di

F

/dt = 100 A/ms6A

t

rr

V

R

= 100 V T

J

=100°C 100 ns

I

F

= 1 A; -di/dt = 100 A/ms; V

R

= 30 V 25 ns

R

thJC

0.9 K/W

Inductive load, T

J

= 25°C

I

C

= I

C90

, V

GE

= 15 V, L = 100 mH,

V

CE

= 0.8 V

CES

, R

G

= R

off

= 4.7 W

Remarks: Switching times may

increase for V

CE

(Clamp) > 0.8 • V

CES

,

higher T

J

or increased R

G

Inductive load, T

J

= 150°C

I

C

= I

C90

, V

GE

= 15 V, L = 100 mH

V

CE

= 0.8 V

CES

, R

G

= R

off

= 4.7 W

Remarks: Switching times may

increase for V

CE

(Clamp) > 0.8 • V

CES

,

higher T

J

or increased R

G

IXGH 30N60BD1

IXGT 30N60BD1

TO-247 AD (IXGH) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800

B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640

D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216

F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084

H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055

K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209

M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

TO-268AA (D

3

PAK)

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.9 5.1 .193 .201

A

1

2.7 2.9 .106 .114

A

2

.02 .25 .001 .010

b 1.15 1.45 .045 .057

b

2

1.9 2.1 .75 .83

C .4 .65 .016 .026

D 13.80 14.00 .543 .551

E 15.85 16.05 .624 .632

E

1

13.3 13.6 .524 .535

e 5.45 BSC .215 BSC

H 18.70 19.10 .736 .752

L 2.40 2.70 .094 .106

L1 1.20 1.40 .047 .055

L2 1.00 1.15 .039 .045

L3 0.25 BSC .010 BSC

L4 3.80 4.10 .150 .161

Min. Recommended Footprint

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

3 - 5

Fig. 1. Saturation Voltage Characteristics Fig. 2. Extended Output Characteristics

Fig. 3. Saturation Voltage Characteristics

Fig. 4. Temperature Dependence of V

CE(sat)

Fig. 5. Admittance Curves

Fig. 6.Temperature Dependence of

BV

DSS

& V

GE(th)

IXGH 30N60BD1

IXGT 30N60BD1

IXGH30N60BD1

IXGH30N60BD1

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