2STF1340

P1-P3 P4-P6 P7-P9 P10-P10

October 2009 Doc ID 12796 Rev 2 1/10

10

2STF1340

Low voltage fast-switching NPN power transistor

Features

■ Very low collector-emitter saturation voltage

■ High current gain characteristic

■ Fast switching speed

Applications

■ LED

■ Motherboard & hard disk drive

■ Mobile equipment

■ DC-DC converter

Description

The 2STF1340 is a NPN transistor manufactured

using new “PB-HCD” (power bipolar high current

density) technology. The resulting transistor

shows exceptional high gain performances

coupled with very low saturation voltage.

The complementary PNP is the 2STF2340.

Figure 1. Internal schematic diagram

SOT-89

4

3

2

1

Table 1. Device summary

Order code Marking Package Packaging

2STF1340 1340 SOT-89 Tape and reel

www.st.com

Electrical ratings 2STF1340

2/10 Doc ID 12796 Rev 2

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

CES

Collector-emitter voltage (V

BE

= 0) 40 V

V

CEO

Collector-emitter voltage (I

B

= 0) 40 V

V

EBO

Emitter-base voltage (I

C

= 0) 5 V

I

C

Collector current 3 A

I

CM

Collector peak current (t

P

< 5 ms) 6 A

P

tot

Total dissipation at T

amb

= 25 °C 1.4 W

T

stg

Storage temperature -65 to 150 °C

T

J

Max. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

R

thJA

(1)

1. Device mounted on PCB area of 1 cm²

Thermal resistance junction-ambient __max 89 °C/W

2STF1340 Electrical characteristics

Doc ID 12796 Rev 2 3/10

2 Electrical characteristics

T

case

= 25 °C unless otherwise specified.

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

CBO

Collector cut-off current

(I

E

= 0)

V

CB

= 40 V 0.1 µA

I

EBO

Emitter cut-off current

(I

C

= 0)

V

EB

= 5 V 0.1 µA

V

(BR)CBO

Collector-base

breakdown voltage

(I

E

= 0)

I

C

= 100 µA 40 V

V

(BR)CEO

(1)

1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %

Collector-emitter

breakdown voltage

(I

B

= 0)

I

C

= 10 mA 40 V

V

(BR)EBO

Emitter-base breakdown

voltage (I

C

= 0)

I

E

= 100 µA 5 V

V

CE(sat)

(1)

Collector-emitter

saturation voltage

I

C

= 2 A I

B

= 100 mA

I

C

= 3 A I

B

= 150 mA

250

350

mV

mV

V

BE(sat)

(1)

Base-emitter saturation

voltage

I

C

= 2 A I

B

= 100 mA 1.2 V

h

FE

(1)

DC current gain

I

C

= 0.1 A V

CE

= 2 V

I

C

= 1 A V

CE

= 2 V

I

C

= 3 A V

CE

= 2 V

100

180

220

450

f

T

Transition frequency

I

C

= 0.1 A V

CE

= 5 V

f = 100 MHz

100 MHz

C

CBO

Collector-base

capacitance (I

E

= 0)

f = 1 MHz V

CB

= 10 V 30 pF

t

on

t

off

Resistive load

Turn-on time

Turn-off time

I

C

= 1.5 A V

CC

= 10 V

I

B(on)

= - I

B(off)

= 150 mA

V

BB(off)

= - 5 V

65

750

ns

ns

P1-P3 P4-P6 P7-P9 P10-P10

2STF1340

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

Bipolar Transistors - BJT LoVltg FastSwtch npn Pwr bipolar trans

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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Products related to this Datasheet

2STF1340