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NCV887801D1R2G

P1-P3P4-P6P7-P9P10-P12P13-P15
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 2
1 Publication Order Number:
NCV8878/D
NCV8878
Automotive Grade
Start-Stop Non-Synchronous
Boost Controller
The NCV8878 is a Non-Synchronous Boost controller designed to
supply a minimum output voltage during Start-Stop vehicle operation
battery voltage sags. The controller drives an external N-channel
MOSFET. The device uses peak current mode control with internal
slope compensation. The IC incorporates an internal regulator that
supplies charge to the gate driver.
Protection features include, cycle-by-cycle current limiting and
thermal shutdown.
Additional features include low quiescent current sleep mode
operation. The NCV8878 is enabled when the supply voltage drops
below the wake up threshold. Boost Operation is initiated when the
supply voltage drops below the regulation set point.
Features
• Automatic Enable Below Wake Up Threshold Voltage (Factory
Programmable)
• Status Pin Diagnostic Function
• Override Disable Function
• Boost Mode Operation at Regulation Set Point
• $2% Output Accuracy Over Temperature Range
• Peak Current Mode Control with Internal Slope Compensation
• Wide Input Voltage Range of 2 V to 40 V, 45 V Load Dump
• Low Quiescent Current in Sleep Mode (<12 mA Typical)
• Cycle−by−Cycle Current Limit Protection
• Hiccup−Mode Overcurrent Protection (OCP)
• Thermal Shutdown (TSD)
• This is a Pb−Free Device
Typical Applications
• Applications Requiring Regulated Voltage through Cranking and
Start−Stop Operation
MARKING
DIAGRAM
www.onsemi.com
SOIC−8
D SUFFIX
CASE 751
1
8
PIN CONNECTIONS
1 8
2
3
4
7
6
5
(Top View)
STATUS
ISNS
GND
GDRV
DISB
VC
VOUT
VDRV
8878xx = Specific Device Code
xx = 01 or 11
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
8878xx
ALYW
G
1
8
Device Package Shipping
†
ORDERING INFORMATION
NCV887801D1R2G SOIC−8
(Pb−Free)
2500 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NCV8878
www.onsemi.com
2
Figure 1. Typical Application
BATTERY
IN
STATUS
CC
RC
CDRV
NVMFS5844NL
NRVB440FS
LP
VDRV
GND
ISNS
STATUS
VOUT
DISB
GDRV
VC
RSNS
Co
Cg
VOUT
Figure 2. Functional Waveforms
V Micro
MBR2045FMFS
DISABLE
Wake Up Threshold
Wakeup
DISB
STATUS
Battery In
VOUT
Regulation
Sleep Threshold
GDRV
Wake Up Delay
COMP
GDRV Switching Delay
Internal Clamp
Voltage
PACKAGE PIN DESCRIPTIONS
Pin No.
Pin
Symbol
Function
1 STATUS This is an open−drain diagnostic. IC status operation flag indicator. This output is a logic low when IC VOUT is
below the wake up threshold voltage (Th
ic,en
) and device is active. A pull−up resistor of around 80 kW should
be connected between STATUS and a microcontroller reference. This output is a logic high when the IC is
disabled or in UVLO.
2 ISNS Current sense input. Connect this pin to the source of the external N−MOSFET, through a current−sense res-
istor to ground to sense the switching current for regulation and current limiting.
3 GND Ground reference.
4 GDRV Gate driver output. Connect to gate of the external N−MOSFET. A series resistance can be added from GDRV
to the gate to tailor EMC performance.
5 VDRV Driving voltage. Internally−regulated supply for driving the external N−MOSFET, sourced from VOUT. Bypass
with a 1.0 mF ceramic capacitor to ground.
6 VOUT Monitors output voltage and provides IC input voltage.
7 VC Output of the voltage error transconductance amplifier. An external compensator network from VC to GND is
used to stabilize the converter.
8 DISB Disable input. This part is disabled when this pin is brought low.
NCV8878
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3
ABSOLUTE MAXIMUM RATINGS (Voltages are with respect to GND, unless otherwise indicated)
Rating
Value Unit
Dc Supply Voltage (VOUT) −0.3 to 40 V
Peak Transient Voltage (Load Dump on VOUT) 45 V
Dc Supply Voltage (VDRV, GDRV) 12 V
Dc Voltage (VC, ISNS) −0.3 to 3.6 V
Dc Voltage (DISB, STATUS) −0.3 to 6 V
Dc Voltage Stress (VOUT − VDRV) −0.7 to 40 V
Operating Junction Temperature −40 to 150 °C
Storage Temperature Range −65 to 150 °C
Peak Reflow Soldering Temperature: Pb−Free, 60 to 150 seconds at 217°C 265 peak °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
PACKAGE CAPABILITIES
Characteristic Value Unit
ESD Capability (All Pins) Human Body Model ≥2.0 kV
Moisture Sensitivity Level 1
Package Thermal Resistance Junction−to−Ambient, R
q
JA
(Note 1)
100 °C/W
1. 1 in
2
, 1 oz copper area used for heatsinking.
TYPICAL VALUES
Part No. D
max
f
S
S
a
V
cl
I
src
I
sink
VOUT SCE
NCV887801 83% 450 kHz
53 mV/ms
200 mV 800 mA 600 mA 6.8 V N
P1-P3P4-P6P7-P9P10-P12P13-P15

NCV887801D1R2G

Mfr. #:
Buy NCV887801D1R2G
Manufacturer:
ON Semiconductor
Description:
Switching Controllers BOOST W/ EN AND STATUS
Lifecycle:
New from this manufacturer.
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