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VS-HFA30TA60C-N3

P1-P3P4-P6P7-P7
VS-HFA30TA60CPbF, VS-HFA30TA60C-N3
www.vishay.com
Vishay Semiconductors
Revision: 14-Jul-15
1
Document Number: 94070
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 15 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Designed and qualified according to
JEDEC
®
-JESD47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA30TA60C... is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 15 A
per leg continuous current, the VS-HFA30TA60C... is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED
®
product line features extremely low values of
peak recovery current (I
RRM
) and does not exhibit any
tendency to “snap-off” during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30TA60C... is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
2 x 15 A
V
R
600 V
V
F
at I
F
1.2 V
t
rr
typ. 19 ns
T
J
max. 150 °C
Diode variation Common cathode
TO-220AB
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
Available
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
600 V
Maximum continuous forward current
per leg
I
F
T
C
= 100 °C
15
A
per device 30
Single pulse forward current I
FSM
150
Maximum repetitive forward current I
FRM
60
Maximum power dissipation P
D
T
C
= 25 °C 74
W
T
C
= 100 °C 29
Operating junction and storage temperature range T
J
, T
Stg
-55 to +150 °C
VS-HFA30TA60CPbF, VS-HFA30TA60C-N3
www.vishay.com
Vishay Semiconductors
Revision: 14-Jul-15
2
Document Number: 94070
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS PER LEG (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 600 - -
V
Maximum forward voltage V
FM
I
F
= 15 A
See fig. 1
-1.31.7
I
F
= 30 A - 1.5 2.0
I
F
= 15 A, T
J
= 125 °C - 1.2 1.6
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated
See fig. 2
-1.010
μA
T
J
= 125 °C, V
R
= 0.8 x V
R
rated - 400 1000
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 25 50 pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8 - nH
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5 and 10
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 19 -
nst
rr1
T
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-4260
t
rr2
T
J
= 125 °C - 70 120
Peak recovery current
See fig. 6
I
RRM1
T
J
= 25 °C - 4.0 6.0
A
I
RRM2
T
J
= 125 °C - 6.5 10
Reverse recovery charge
See fig. 7
Q
rr1
T
J
= 25 °C - 80 180
nC
Q
rr2
T
J
= 125 °C - 220 600
Peak rate of fall of
recovery current during t
b
See fig. 8
dI
(rec)M
/dt1 T
J
= 25 °C - 250 -
A/μs
dI
(rec)M
/dt2 T
J
= 125 °C - 160 -
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Junction to case,
single leg conducting
R
thJC
1.7
K/W
Junction to case,
both legs conducting
- - 0.85
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 40
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased - 0.25 -
Weight
-6.0- g
-0.21- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-220AB HFA30TA60C
VS-HFA30TA60CPbF, VS-HFA30TA60C-N3
www.vishay.com
Vishay Semiconductors
Revision: 14-Jul-15
3
Document Number: 94070
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward
Current (Per Leg)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
1.0 1.4 1.81.2 1.6 2.0 2.2 2.4
1
100
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
0 100 200 300 400 500 600
0.01
0.1
1
10
100
1000
10 000
T
J
= 125 °C
T
J
= 150 °C
T
J
= 25 °C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0 100 200 400 500300 600
10
100
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P1-P3P4-P6P7-P7

VS-HFA30TA60C-N3

Mfr. #:
Buy VS-HFA30TA60C-N3
Manufacturer:
Vishay
Description:
Rectifiers 2x15A 600V Ultrafast 19ns HEXFRED
Lifecycle:
New from this manufacturer.
Delivery:
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