NUR460/L02,112

1. Product profile
1.1 General description
Ultrafast epitaxial power diode in a SOD141 (DO-201AD) axial lead plastic package.
1.2 Features and benefits
Axial leaded plastic package
Fast switching
High voltage capability
Low forward voltage drop
Low thermal resistance
Soft recovery characteristic
1.3 Applications
Discontinuous Current Mode (DCM)
Power Factor Correction (PFC)
High frequency switched-mode power
supplies
1.4 Quick reference data
NUR460
Ultrafast power diode
Rev. 2 — 20 July 2011 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
RRM
repetitive peak reverse
voltage
- - 600 V
I
F(AV)
average forward
current
square-wave pulse; δ = 0.5;
see Figure 1
; see Figure 2
--4A
Static characteristics
V
F
forward voltage I
F
=4A; T
j
=2C;
see Figure 4
--1.28V
Dynamic characteristics
t
rr
reverse recovery time I
F
=1A; V
R
=30V;
dI
F
/dt = 50 A/µs; T
j
25 °C;
Ramp Recovery;
see Figure 5
-3365ns
I
R
=1A; I
F
=0.5A;
I
R(meas)
= 0.25 A; T
j
=2C;
Step Recovery; see Figure 6
-2550ns
NUR460 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 20 July 2011 2 of 10
NXP Semiconductors
NUR460
Ultrafast power diode
2. Pinning information
3. Ordering information
4. Limiting values
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
SOD141 (DO-201AD)
2 A anode
ak
A
001aaa020
K
Table 3. Ordering information
Type number Package
Name Description Version
NUR460 DO-201AD Hermetically sealed plastic package; axial leaded; 2 leads SOD141
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse voltage - 600 V
V
RWM
crest working reverse voltage - 600 V
V
R
reverse voltage DC - 600 V
I
F(AV)
average forward current square-wave pulse; δ =0.5;
see Figure 1;
see Figure 2
-4A
I
FRM
repetitive peak forward current square-wave pulse; δ =0.5 - 8 A
I
FSM
non-repetitive peak forward
current
t
p
= 8.3 ms; sine-wave pulse;
T
j(init)
= 25 °C; see Figure 3
-110A
t
p
= 10 ms; sine-wave pulse;
T
j(init)
= 25 °C; see Figure 3
- 100 A
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
NUR460 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 20 July 2011 3 of 10
NXP Semiconductors
NUR460
Ultrafast power diode
Fig 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig 3. Non-repetitive peak forward current as a function of pulse width; square waveform; maximum values
I
F(AV)
(A)
08624
003aag297
4
5
3
2
1
6
7
P
tot
(W)
0
δ
= 1
0.5
0.2
0.1
I
F(AV)
(A)
054231
003aag298
2
3
1
4
5
P
tot
(W)
0
a = 1.57
1.9
2.2
2.8
4.0
003aag299
t
p
(s)
10
-5
10
-2
10
-3
10
-4
10
2
10
3
I
FSM
(A)
10
1
t
p
P
t

NUR460/L02,112

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
DIODE GEN PURP 600V 4A DO201AD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet