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NCV8570MN250R2G

P1-P3P4-P6P7-P9P10-P11
Semiconductor Components Industries, LLC, 2013
June, 2013 − Rev. 4
1 Publication Order Number:
NCV8570/D
NCV8570
200 mA, Ultra Low Noise,
High PSRR, BiCMOS RF LDO
Regulator
Noise sensitive RF applications such as Power Amplifiers in satellite
radios, infotainment equipment, and precision instrumentation for
automotive applications require very clean power supplies.
The NCV8570 is 200 mA LDO that provides the engineer with a
very stable, accurate voltage with ultra low noise and very high Power
Supply Rejection Ratio (PSRR) suitable for RF applications. In order
to optimize performance for battery operated portable applications,
the NCV8570 employs an advanced BiCMOS process to combine the
benefits of low noise and superior dynamic performance of bipolar
elements with very low ground current consumption at full loads
offered by CMOS.
Furthermore, in order to provide a small footprint for
space−conscious applications, the NCV8570 is stable with small, low
value capacitors and is available in very small DFN6 2x2.2 and
TSOP−5 packages.
Features
Output Voltage Options:
1.8 V, 2.5 V, 2.75 V, 2.8 V, 3.0 V, 3.3 V
Contact Factory for Other Voltage Options
Output Current Limit 200 mA
Ultra Low Noise (typ 15 mV
rms
)
Very High PSRR (typ 80 dB)
Stable with Ceramic Output Capacitors as low as 1 mF
Low Sleep Mode Current (max 1 mA)
Active Discharge Circuit
Current Limit Protection
Thermal Shutdown Protection
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These are Pb−Free Devices
Typical Applications
Satellite and HD Radio
Noise Sensitive Applications (Video, Audio)
Analog Power Supplies
Portable/Built−in DVD Entertainment Systems
GPS
NCV8570
CE
GND
Figure 1. Typical Application Schematic
V
in
V
out
C
in
C
out
C
noise
V
in
V
out
C
noise
http://onsemi.com
MARKING DIAGRAMS
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
ORDERING INFORMATION
DFN6
MN SUFFIX
CASE 506BA
XX = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
XXMG
G
C
noise
GND
V
out
GND
V
in
CE
6
5
4
1
2
3
PIN ASSIGNMENTS
(Top View)
C
noise
V
out
GND
V
in
CE
51
(Top View)
1
5
XXXAYWG
G
XXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
TSOP−5
SN SUFFIX
CASE 483
DFN6
TSOP−5
NCV8570
http://onsemi.com
2
Figure 2. Simplified Block Diagram
+
−
Current
Limit
Bandgap
Reference
Voltage
CE
GND
Active
Discharge
V
out
V
in
C
noise
PIN FUNCTION DESCRIPTION
Pin No.
DFN6
TSOP−5 Pin Name Description
1 3 CE Chip Enable: This pin allows on/off control of the regulator. To disable the device, connect
to GND. If this function is not in use, connect to V
in
. Internal 5 MW Pull Down resistor is
connected between CE and GND.
2, 5, EPAD 2 GND Power Supply Ground (Pins are fused for the DFN package)
3 1 V
in
Power Supply Input Voltage
4 5 V
out
Regulated Output Voltage
6 4 C
noise
Noise reduction pin. (Connect 100 nF or 10 nF capacitor to GND)
MAXIMUM RATINGS
Rating Symbol Value Unit
Input Voltage (Note 1) V
in
−0.3 V to 6 V V
Chip Enable Voltage V
CE
−0.3 V to V
in
+0.3 V V
Noise Reduction Voltage V
Cnoise
−0.3 V to V
in
+0.3 V V
Output Voltage V
out
−0.3 V to V
in
+0.3 V V
Maximum Junction Temperature (Note 1) T
J(max)
150 C
Storage Temperature Range T
STG
−55 to 150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL−STD−883, Method 3015
Machine Model Method 200 V
This device series meets or exceeds AEC Q100 standard.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Package Thermal Resistance, DFN6: (Note 1)
Junction−to−Lead (pin 2)
Junction−to−Ambient
R
q
JA
37
120
C/W
Package Thermal Resistance, TSOP−5: (Note 1)
Junction−to−Lead (pin 5)
Junction−to−Ambient
R
q
JA
109
220
C/W
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area
NCV8570
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(V
in
= V
out
+ 0.5 V, V
CE
= 1.2 V, C
in
= 0.1 mF, C
out
= 1 mF, C
noise
= 10 nF, T
A
= −40C to 85C, unless otherwise specified (Note 2))
Characteristic
Test Conditions Symbol Min Typ Max Unit
REGULATOR OUTPUT
Input Voltage
V
in
2.5 − 5.5 V
Output Voltage (Note 3) 1.8 V
2.5 V
2.75 V
2.8 V
3.0 V
3.3 V
V
in
= (V
out
+0.5 V) to 5.5 V
I
out
= 1 mA
V
out
1.764
2.450
2.695
2.744
2.940
3.234
(−2%)
−
−
−
−
−
−
1.836
2.550
2.805
2.856
3.060
3.366
(+2%)
V
Output Voltage (Note 3) 1.8 V
2.5 V
2.75 V
2.8 V
3.0 V
3.3 V
V
in
= (V
out
+0.5 V) to 5.5 V
I
out
= 1 mA to 200 mA
V
out
1.746
2.425
2.6675
2.716
2.910
3.201
(−3%)
−
−
−
−
−
−
1.854
2.575
2.8325
2.884
3.090
3.399
(+3%)
V
Power Supply Ripple Rejection V
in
= V
out
+1.0 V + 0.5 V
p−p
I
out
= 1 mA to 150 mA f = 120 Hz
C
noise
= 100nF f = 1 kHz
f = 10 kHz
PSRR
−
−
−
80
80
65
−
−
−
dB
Line Regulation V
in
= (V
out
+0.5 V) to 5.5 V, I
out
= 1 mA Reg
line
−0.2 − 0.2 %/V
Load Regulation I
out
= 1 mA to 200 mA Reg
load
− 12 25 mV
Output Noise Voltage f = 10 Hz to 100 kHz
I
out
= 1 mA to 150 mA C
noise
= 100 nF
C
noise
= 10 nF
V
n
−
−
15
20
−
−
mV
rms
Output Current Limit V
out
= V
out(nom)
– 0.1 V I
LIM
200 310 470 mA
Output Short Circuit Current V
out
= 0 V I
SC
210 320 490 mA
Dropout Voltage (Note 4, 5) 2.5 V
2.75 V
2.8 V
3.0 V
3.3 V
I
out
= 150 mA V
DO
−
−
−
−
−
105
105
105
100
100
155
155
155
150
150
mV
Dropout Voltage (Note 6) 2.5 V
2.75 V
2.8 V
3.0 V
3.3 V
I
out
= 200 mA V
DO
−
−
−
−
−
170
150
150
140
130
215
205
205
200
200
mV
GENERAL
Ground Current I
out
= 1 mA
I
out
= 200 mA
I
GND
−
−
70
110
90
220
mA
Disable Current V
CE
= 0 V I
DIS
− 0.1 1
mA
Thermal Shutdown Threshold (Note 4) T
SD
− 150 − C
Thermal Shutdown Hysteresis (Note 4) T
SH
− 20 − C
CHIP ENABLE
Input Threshold Low
High
V
th(CE)
−
1.2
−
−
0.4
−
V
Internal Pull−Down Resistance (Note 7) R
PD(CE)
2.5 5 10
MW
TIMING
Turn−on Time
I
out
= 150 mA C
noise
= 10 nF
C
noise
= 100 nF
t
on
−
−
0.4
4
−
−
ms
Turn−off Time C
noise
= 10 nF/100 nF I
out
= 1 mA
I
out
= 10 mA
t
off
−
−
800
200
−
−
ms
2. Performance guaranteed over the indicated operating temperature range by design and/or characterization, production tested at
T
J
= T
A
= 25C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
3. Contact factory for other voltage options.
4. Guaranteed by design and characterization.
5. Characterized when output voltage falls 100 mV below the regulated voltage at V
in
= V
out
+ 1 V if V
out
< 2.5 V, then V
DO
= V
in
− V
out
at V
in
= 2.5 V.
6. Measured when output voltage falls 100 mV below the regulated voltage at V
in
= V
out
+ 0.5 V if V
out
< 2.5 V, then V
DO
= V
in
− V
out
at V
in
= 2.5 V.
7. Expected to disable device when CE pin is floating.
P1-P3P4-P6P7-P9P10-P11

NCV8570MN250R2G

Mfr. #:
Buy NCV8570MN250R2G
Manufacturer:
ON Semiconductor
Description:
LDO Voltage Regulators RF LDO / 150 mA
Lifecycle:
New from this manufacturer.
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