71016S15PHG

SEPTEMBER 2013
DSC-3210/11
1
©2013 Integrated Device Technology, Inc.
Features
64K x 16 advanced high-speed CMOS Static RAM
Equal access and cycle times
Commercial : 12/15/20ns
Industrial: 15/20ns
One Chip Select plus one Output Enable pin
Bidirectional data inputs and outputs directly TTL-
compatible
Low power consumption via chip deselect
Upper and Lower Byte Enable Pins
Commercial and industrial product available in 44-pin
Plastic SOJ package and 44-pin TSOP package
Description
The IDT71016 is a 1,048,576-bit high-speed Static RAM organized
as 64K x 16. It is fabricated using high-perfomance, high-reliability CMOS
technology. This state-of-the-art technology, combined with innovative
circuit design techniques, provides a cost-effective solution for high-speed
memory needs.
The IDT71016 has an output enable pin which operates as fast as 7ns,
with address access times as fast as 12ns. All bidirectional inputs and
outputs of the IDT71016 are TTL-compatible and operation is from a single
5V supply. Fully static asynchronous circuitry is used, requiring no clocks
or refresh for operation.
The IDT71016 is packaged in a JEDEC standard 44-pin Plastic SOJ
and 44-pin TSOP Type II.
Functional Block Diagram
Output
Enable
Buffer
Address
Buffers
Chip
Enable
Buffer
Write
Enable
Buffer
Byte
Enable
Buffers
OE
A0 - A15
Row / Column
Decoders
CS
WE
BHE
BLE
64K x 16
Memory
Array
Sense
Amps
and
Write
Drivers
16
Low
Byte
I/O
Buffer
8
8
8
8
I/O 8
I/O 15
I/O 7
I/O 0
3210 drw 01
High
Byte
I/O
Buffer
,
CMOS Static RAM
1 Meg (64K x 16-Bit)
IDT71016S
6.42
2
IDT71016, CMOS Static RAM
1 Meg (64K x 16-bit) Commercial and Industrial Temperature Ranges
Pin Configurations
SOJ/TSOP
Top View
Truth Table
(1)
Pin Descriptions
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
I/O 7
NC
A12
A13
A14
A15
WE
I/O 6
I/O 5
I/O 4
V
SS
V
CC
I/O 3
I/O 2
I/O 1
I/O 0
CS
A0
A1
A2
A3
A4
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A6
A7
OE
BHE
BLE
I/O 15
I/O 14
I/O 13
I/O 12
V
SS
V
CC
I/O 11
I/O 10
I/O 9
I/O 8
A8
A9
A10
A11
NC
A5
NC
SO44-1
SO44-2
3210 drw 02
,
A
0
- A
15
Address Inputs Input
CS
Chip Select Input
WE
Write Enable Input
OE
Output Enable Input
BHE
High Byte Enable Input
BLE
Low Byte Enable Input
I/O
0
- I/O
15
Data Input/Output I/O
V
CC
5.0V Power Pwr
V
SS
Ground Gnd
3210 tbl 01
NOTE:
1. H = VIH, L = VIL, X = Don't care.
CS OE WE BLE BHE
I/O
0
- I/O
7
I/O
8
- I/O
15
Function
H X X X X High-Z High-Z Deselected - Standby
L L H L H DATAOUT High-Z Low Byte Read
L L H H L High-Z DATAOUT High Byte Read
L L H L L DATAOUT DATAOUT` Word Read
L X L L L DATAIN DATAIN Word Write
L X L L H DATAIN High-Z Low Byte Write
L X L H L High-Z DATAIN High Byte Write
L H H X X High-Z High-Z Outputs Disabled
L X X H H High-Z High-Z Outputs Disabled
3210 tbl 02
6.42
IDT71016, CMOS Static RAM
1 Meg (64K x 16-bit) Commercial and Industrial Temperature Ranges
3
DC Electrical Characteristics
(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC–0.2V)
Absolute Maximum Ratings
(1)
Capacitance
(TA = +25° C, f = 1.0MHz, SOJ/TSOP Package)
Recommended DC Operating
Conditions
DC Electrical Characteristics
(VCC = 5.0V ± 10%, Commercial and Industrial Temperature Range)
NOTE:
1. V
IL (min.) = –1.5V for pulse width less than tRC/2, once per cycle.
Symbol Parameter Min. Typ. Max. Unit
V
CC
Supply Voltage 4.5 5.0 5.5 V
GND Ground 0 0 0 V
V
IH
Input High Voltage 2.2
____
V
DD
+0.5 V
V
IL
Input Low Voltage -0.5
(1)
____
0.8 V
3210 tbl 05
NOTE:
1. This parameter is guaranteed by device characterization, but not production
tested.
Symbol Parameter
(1)
Conditions Max. Unit
C
IN
Input Capacitance V
IN
= 3dV 6 pF
C
I/O
I/O Capacitance V
OUT
= 3dV 7 pF
3210 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VCC + 0.5V.
Symbol Rating Value Unit
V
TERM
(2)
Terminal Voltage with
Respect to GND
-0.5 to +7.0 V
T
BIAS
Tem per a tu r e
Under Bias
-55 to +125
o
C
T
STG
Storage
Tem p er a tu r e
-55 to +125
o
C
P
T
Power Dissipation 1.25 W
I
OUT
DC Output Current 50 mA
3210 tbl 03
Symbol Parameter Test Conditions Min. Max.
Unit
|I
LI
| Input Leakage Current V
CC
= Max., V
IN
= GND to V
CC
___
A
|I
LO
| Output Leakage Current V
CC
= Max., CS = V
IH
, V
OUT
= GND to V
CC
___
A
V
OL
Output Low Voltage I
OL
= 8mA, V
CC
= Min.
___
0.4 V
V
OH
Output High Voltage I
OH
= -4mA, V
CC
= Min. 2.4
___
V
3210 tbl 07
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing .
71016S12 71016S15 71016S20
Symbol Parameter Com'l. Com'l. Ind. Com'l. Ind. Unit
I
CC
Dynamic Operating Current
CS <
V
IL
, Outputs Open, V
CC
= Max., f = f
MAX
(2)
210 180 180 170 170 mA
I
SB
Standby Power Supply Current (TTL Level)
CS >
V
IH
, Outputs Open, V
CC
= Max., F = f
MAX
(2)
60 50 50 45 45 mA
I
SB1
Standby Power Supply Current (CMOS Level)
CS >
V
HC
, Outputs Open, V
CC
= Max., f = 0
(2)
V
IN
< V
LC
or V
IN
> V
HC
10 10 10 10 10 mA
3210 tbl 08
Grade Temperature GND V
CC
Commercial 0°C to +70°C 0V 5.0V ± 10%
Industrial –40°C to +85°C 0V 5.0V ± 10%
3210 tbl 04
Recommended Operating
Temperature and Supply Voltage

71016S15PHG

Mfr. #:
Manufacturer:
IDT
Description:
SRAM 64Kx16 ASYNCHRONOUS 5.0V STATIC RAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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