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IRFB7440GPBF

P1-P3P4-P6P7-P9P10-P10
7
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014
IRFB7440GPbF
Fig. 18 - Typical Recovery Current vs. di
f
/dt
Fig 17. Threshold Voltage vs. Temperature
Fig. 20 - Typical Stored Charge vs. di
f
/dtFig. 19 - Typical Recovery Current vs. di
f
/dt
Fig. 21 - Typical Stored Charge vs. di
f
/dt
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 100μA
I
D
= 1.0mA
I
D
= 1.0A
0 200 400 600 800 1000
di
F
/dt (A/μs)
1
2
3
4
5
6
7
8
I
R
R
M
(
A
)
I
F
= 60A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
1
2
3
4
5
6
7
8
I
R
R
M
(
A
)
I
F
= 100A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
40
50
60
70
80
90
100
110
Q
R
R
(
n
C
)
I
F
= 60A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
0
20
40
60
80
100
Q
R
R
(
n
C
)
I
F
= 100A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
8
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014
IRFB7440GPbF
Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Inductor Current
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
V
GS
9
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014
IRFB7440GPbF
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB packages are not recommended for Surface Mount Application.
EXAMPLE: THIS IS AN IRFB4310GPBF
Note: "P" in as sembly line position
indicates "Lead - Free"
INTER NAT IONAL
PART NUMBER
RECTIFIER
LOT CODE
AS S E MB L Y
LOGO
Y= LAS T DIGIT OF
DAT E CODE :
WW= WOR K WE E K
X= F ACT OR Y CODE
Note: "G" s uffix in part number
i ndicates "H al ogen - F ree"
CAL E NDAR Y E AR
P1-P3P4-P6P7-P9P10-P10

IRFB7440GPBF

Mfr. #:
Buy IRFB7440GPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFET, 40V, 120A, 2 90 nC Qg, TO-220AB
Lifecycle:
New from this manufacturer.
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