BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9 — 23 September 2014 4 of 17
NXP Semiconductors
BC847 series
45 V, 100 mA NPN general-purpose transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB with 60 m copper strip line, standard footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 60 m copper strip line, standard footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 45 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 100 mA
I
CM
peak collector current single pulse;
t
p
1ms
-200mA
I
BM
peak base current single pulse;
t
p
1ms
-100mA
P
tot
total power dissipation T
amb
25 C
[1]
SOT23 - 250 mW
SOT323 - 200 mW
SOT416 - 150 mW
SOT883
[2]
-250mW
T
j
junction temperature - 150 C
T
amb
ambient temperature 65 +150 C
T
stg
storage temperature 65 +150 C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
SOT23 - - 500 K/W
SOT323 - - 625 K/W
SOT416 - - 833 K/W
SOT883
[2]
--500K/W
