BUK9209-40B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 15 June 2010 6 of 14
NXP Semiconductors
BUK9209-40B
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0.25mA; V
GS
=0V; T
j
=25°C 40--V
I
D
=0.25mA; V
GS
=0V; T
j
= -55 °C 36 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 10
1.1 1.5 2 V
I
D
=1mA; V
DS
=V
GS
; T
j
= 185 °C;
see Figure 10
0.4--V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 10
--2.3V
I
DSS
drain leakage current V
DS
=40V; V
GS
=0V; T
j
= 185 °C - - 500 µA
V
DS
=40V; V
GS
=0V; T
j
= 25 °C - 0.02 1 µA
I
GSS
gate leakage current V
DS
=0V; V
GS
=15V; T
j
= 25 °C - 2 100 nA
V
DS
=0V; V
GS
=-15V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=4.5V; I
D
=25A; T
j
=25°C --10mΩ
V
GS
=5V; I
D
=25A; T
j
= 185 °C;
see Figure 11; see Figure 12
- - 17.5 mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C - 6.2 7 mΩ
V
GS
=5V; I
D
=25A; T
j
=25°C;
see Figure 11; see Figure 12
-7.69mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=32V; V
GS
=5V;
T
j
=25°C; see Figure 13
-32-nC
Q
GS
gate-source charge - 7 - nC
Q
GD
gate-drain charge - 12 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C; see Figure 14
- 2714 3619 pF
C
oss
output capacitance - 481 577 pF
C
rss
reverse transfer
capacitance
- 209 286 pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=1.2Ω; V
GS
=5V;
R
G(ext)
=10Ω; T
j
=25°C
-29-ns
t
r
rise time - 106 - ns
t
d(off)
turn-off delay time - 108 - ns
t
f
fall time - 89 - ns
L
D
internal drain
inductance
measured from drain to center of die ;
T
j
=25°C
-2.5-nH
L
S
internal source
inductance
measured from source lead to source
bond pad ; T
j
=25°C
-7.5-nH
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 15
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs;
V
GS
=-10V; V
DS
=30V; T
j
=25°C
-57-ns
Q
r
recovered charge - 47 - nC