BYG10D, BYG10G, BYG10J, BYG10K, BYG10M, BYG10Y
www.vishay.com
Vishay General Semiconductor
Revision: 15-May-2018
1
Document Number: 88957
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Controlled avalanche characteristics
• Glass passivated pellet chip junction
• Low reverse current
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,...)
Terminals: matte tin plated leads, solderable per J-STD-002
and JESD 22-B102
E3, M3, HE3, HM3 suffix meet JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.5 A
V
RRM
200 V, 400 V, 600 V, 800 V,
1000 V, 1600 V
I
FSM
30 A
I
R
1.0 μA
V
F
1.15 V
E
R
20 mJ
T
J
max. 150 °C
Package SMA (DO-214AC)
Circuit configuration Single
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT
Device marking code BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y
Maximum repetitive peak reverse voltage V
RRM
200 400 600 800 1000 1600 V
Average forward current I
F(AV)
1.5 A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
I
FSM
30 A
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I
(BR)R
= 1 A, T
J
= 25 °C (for BYG10D thru BYG10M)
I
(BR)R
= 0.4 A, T
J
= 25 °C (for BYG10Y)
E
R
20 mJ
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
