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FERD30M45CT

P1-P3P4-P6P7-P9P10-P10
This is information on a product in full production.
July 2014 DocID023771 Rev 3 1/10
FERD30M45C
Field effect rectifier
Datasheet - production data
Features
• Advanced rectifier proprietary process
• Stable leakage current over reverse voltage
• Reduce leakage current
• Low forward voltage drop
• High frequency operation
Description
This dual center tap field effect rectifier provides
stable leakage current over the full range of
reverse voltage and low forward voltage drop.
Packaged in TO-220AB, I²PAK or D
2
PAK, this
device is intended to be used in solar bypass
junction boxes and in switch mode power
supplies.
A1
A2
K
A1
K
A2
A1
K
A2
TO-220AB
D
2
PAK
I
2
PAK
A1
K
A2
Table 1. Device summary
Symbol Value
I
F(AV)
2 x 15 A
V
RRM
45 V
T
j (max)
+175 °C (up to 200 °C forward
mode only on D²PAK)
V
F
(typ) 0.35 V
www.st.com
Characteristics FERD30M45C
2/10 DocID023771 Rev 3
1 Characteristics
When diodes 1 and 2 are used simultaneously:
T
j
(diode 1) = P(diode1) x R
th(j-c)
(per diode) + P(diode2) x R
th
(c)
Table 2. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 45 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current, δ = 0.5
T
c
= 155 °C
Per diode
Per device
15
30
A
T
c
= 155 °C
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 250 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature 175 °C
T
j
Maximum operating temperature on D²PAK
(DC forward current without reverse bias, t = 1 hour)
(1)
200 °C
1. condition to avoid thermal runaway for a diode on its own heatsink.
dPtot
dTj
---------------
1
Rth j a–()
------------ --------------
<
Table 3. Thermal resistance
Symbol Parameter Value (max) Unit
R
th(j-c)
Junction to case
Per diode 1.6
°C/WTotal 1.05
R
th(c)
Coupling 0.5
DocID023771 Rev 3 3/10
FERD30M45C Characteristics
10
To evaluate the conduction losses use the following equation:
P = 0.27 x I
F(AV)
+ 0.012 I
F
2
(RMS))
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
600 µA
T
j
= 125 °C 25 50 mA
V
F
(2)
Forward voltage drop
T
j
= 125 °C I
F
= 7.5 A 0.305 0.350
V
T
j
= 125 °C I
F
= 10 A 0.350 0.395
T
j
= 25 °C
I
F
= 15 A
0.420 0.470
T
j
= 125 °C 0.420 0.450
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
Figure 1. Average forward power dissipation
versus average forward current (per diode)
Figure 2. Average forward current versus
ambient temperature (δ = 0.5, per diode)
0
2
4
6
8
10
12
0 2 4 6 8 101214161820
P
F(AV)
(W)
I
F(AV)
(A)
T
δ
=tp/T
tp
δ = 0.05 δ = 0.1
δ = 0.2
δ = 0.5
δ = 1.0
0
2
4
6
8
10
12
14
16
18
0 25 50 75 100 125 150 175
T
amb
(°C)
I
F(AV)
(A)
T
δ
=tp/T
tp
R
R
t
t
h
h
(
(
j
j
-
-
a
c
)
)
=
Figure 3. Junction capacitance versus reverse
voltage applied (typical values, per diode)
Figure 4. Forward voltage drop versus forward
current (per diode)
C(pF)
100
1000
10000
1 10 100
V
R
(V)
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
0.1
1.0
10.0
100.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V
FM
(V)
I
FM
(A)
T
j
=25°C
(Maximum values)
T
j
=125°C
(Maximum values)
T
j
=125°C
(Typical values)
P1-P3P4-P6P7-P9P10-P10

FERD30M45CT

Mfr. #:
Buy FERD30M45CT
Manufacturer:
STMicroelectronics
Description:
Rectifiers ST advancd rectifier 45V 0.35Vf +175
Lifecycle:
New from this manufacturer.
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