NE856M03NPN SILICON TRANSISTOR
• NEW M03 PACKAGE:
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
• LOW NOISE FIGURE:
NF = 1.4 dB at 1 GHz
• HIGH COLLECTOR CURRENT:
I
CMAX = 100 mA
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M03
PART NUMBER NE856M03
EIAJ
1
REGISTERED NUMBER 2SC5432
PACKAGE OUTLINE M03
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz 3.0 4.5
NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB 1.4 2.5
|S21E|
2
Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz dB 7.0 10.0
hFE
2
Forward Current Gain at VCE = 3 V, IC = 7 mA 80 145
ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 1.0
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 1.0
CRE
3
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 0.7 1.5
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
California Eastern Laboratories
1
3
2
1.2±0.05
0.8±0.1
+0.1
-0.05
0.15
1.4 ±0.1
(0.9)
0.59±0.05
0.2±0.1
0.45
0.45
0.3±0.1
TC
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
DESCRIPTION
NEC's NE856M03 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/flat lead style "M03" package
is ideal for today's portable wireless applications. The NE856
is also available in chip, Micro-x, and eight different low cost
plastic surface mount package styles.
