2016/07/01
Micro Commercial Components
M C C
R
Parameter Symbol Test Condition Min Typ Max Units
Static characteristics
Drain-source breakdown voltage BV
DSS
V
GS
= 0V, I
D
=-250µA -30 V
Zero gate voltage drain current I
DSS
V
DS
=-24V,V
GS
= 0V -1 µA
Gate-source leakage current I
GSS
V
GS
=±20V, V
DS
= 0V ±100 nA
V
GS
=-10V, I
D
=-4.1A 50
60 m
Drain-source on-resistance (note 1) R
DS(on)
V
GS
=-4.5V, I
D
=-3A 68
87 m
Forward tranconductance (note 1) g
FS
V
DS
=-5V, I
D
=-4A
5.5
S
Gate threshold voltage VGS(
t
h)
VDS =V
GS
, ID =-250µA -1 -1.4
-3 V
Diode forward voltage (note 1) V
SD
S
I=-1A,V
GS
=0V
-1
V
Dynamic characteristics (note 2)
Input capacitance C
iss
700 pF
Output capacitance Coss 120 pF
Reverse transfer capacitance C
rss
V
DS
=-15V,V
GS
=0V,f =1MHz
75 pF
Switching Characteristics (note 2)
Turn-on delay time td(
on)
8.6 ns
Turn-on rise time t
r
5.0 ns
Turn-off delay time td(
o
f
f
)
28.2 ns
Turn-off fall time t
f
V
GS
=-10V,V
DS
=-15V,
R
L
=3.6,R
GEN
=3
13.5 ns
Notes:
1. Pulse test: Pulse width 300µs, duty cycle 2%.
2. These parameters have no way to verify.
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
