SST4401 / MMST4401 / 2N4401
Transistors
Rev.A 1/3
NPN Medium Power Transistor
(Switching)
SST4401 / MMST4401 / 2N4401
zFeatures
1) BV
CEO>40V (IC=1mA)
2) Complements the SST4403 / MMST4403 / PN4403.
zPackage, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
SST4401
SST3
R2X
T116
3000
MMST4401
SMT3
R2X
T146
3000
2N4401
TO-92
−
T93
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
60
40
6
0.6
0.625
150
−
55 to +150
Unit
V
V
V
A
Collector power
dissipation
P
C
0.2
0.35
W
W
˚C
˚C
2N4401
SST4401
MMST4401
SST4401
MMST4401
∗
Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE
+
+
zExternal dimensions (Unit : mm)
SST4401
MMST4401
2N4401
0 to 0.1
0.2Min.
2.4
±
0.2
1.3
0.95
0.45
±
0.1
0.15
0.4
2.9
±
0.2
1.9
±
0.2
0.95
0.95
+0.2
−
0.1
−
0.1
+0.2
+0.1
−
0.06
+0.1
−
0.05
(2)
(1)
(3)
0 to 0.1
2.8
±
0.2
1.6
0.3 to 0.6
1.1
0.8
±
0.1
0.15
0.4
2.9
±
0.2
1.9
±
0.2
0.95
0.95
+0.2
−
0.1
−
0.1
+0.2
+0.1
−
0.06
+0.1
−
0.05
(2)
(1)
(3)
4.8
±
0.2
(12.7Min.)
2.5Min.
4.8
±
0.2
3.7
±
0.2
5
0.45
±
0.1
2.3
0.5
±
0.1.
2.5
+0.3
−
0.1
(1)
(2) (3)
All terminals have the same
dimensions
All terminals have the same
dimensions
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
60
40
6
−
−
−
−
−
−
−
−
−
−
0.1
0.1
V
V
V
µA
µA
I
C
=
100µA
I
C
=
1mA
I
E
=
100µA
V
CB
=
35V
V
EB
=
5V
−−
1.2
Base-emitter saturation voltage
V
BE(sat)
−−
0.95
V
−−
0.75 I
C
/I
B
=
500mA/50mA
Collector-emitter saturation voltage
V
CE(sat)
−−
0.4
V
I
C
/I
B
=
150mA/15mA
I
C
/I
B
=
500mA/50mA
I
C
/I
B
=
150mA/15mA
40
−−
100
−
300
DC current transfer ratio
h
FE
80
−−
−
40
−−
20
−−
V
CE
=
1V, I
C
=
0.1mA
V
CE
=
1V, I
C
=
1mA
V
CE
=
1V, I
C
=
10mA
V
CE
=
1V, I
C
=
150mA
V
CE
=
2V, I
C
=
500mA
Transition frequency
Collector output capacitance
f
T
Cob
250
−
−
−
−
6.5
MHz
pF
V
CE
=
10V, I
E
=
−
20mA, f
=
100MHz
V
CB
=
10V, f
=
100kHz
Emitter input capacitance
Cib
−−
30
pF
V
EB
=
0.5V, f
=
100kHz
Delay time
td
−−
15
ns
V
CC
=
30V, V
EB(OFF)
=
2V, I
C
=
150mA, I
B1
=
15mA
V
CC
=
30V, V
EB(OFF)
=
2V, I
C
=
150mA, I
B1
=
15mA
Rise time
tr
−−
20
ns
Storage time
tstg
−−
225
ns
V
CC
=
30V, I
C
=
150mA, I
B1
=-
I
B2
=
15mA
V
CC
=
30V, I
C
=
150mA, I
B1
=-
I
B2
=
15mA
Fall time
tf
−−
30 ns
