VS-16CTU04STRL-M3

VS-16CTU04S-M3, VS-16CTU04-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Oct-17
1
Document Number: 96232
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier, 16 A FRED Pt
®
FEATURES
Ultrafast recovery time
Low forward voltage drop
Low leakage current
175 °C operating junction temperature
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
Vishay Semiconductors FRED Pt
®
series are the state of the
art ultrafast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and ultrafast
recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 8 A
V
R
400 V
V
F
at I
F
0.94 V
t
rr
typ. 35 ns
T
J
max. 175 °C
Package D
2
PAK (TO-263AB), TO-262AA
Circuit configuration Common cathode
D
2
PAK (TO-263AB)
TO-262AA
1
3
2
1
3
2
Anode
1
3
2
Ba
se
Common
Cathode
2
Common
Cathode
Anode
Anode
1
3
2
Base
Common
Cathode
2
Common
Cathode
Anode
VS-16CTU04S-M3
VS-16CTU04-1-M3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
400 V
Average rectified forward current
per leg
I
F(AV)
8
A
total device Rated V
R
, T
C
= 155 °C 16
Non-repetitive peak surge current I
FSM
T
C
= 25 °C 100
Peak repetitive forward current I
FRM
Rated V
R
, square wave, 20 kHz, T
C
= 155 °C 16
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS PER LEG (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 400 - -
V
Forward voltage V
F
I
F
= 8 A - 1.19 1.3
I
F
= 8 A, T
J
= 150 °C - 0.94 1.0
Reverse leakage current I
R
V
R
= V
R
rated - 0.2 10
μA
T
J
= 150 °C, V
R
= V
R
rated - 20 500
Junction capacitance C
T
V
R
= 400 V - 14 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
VS-16CTU04S-M3, VS-16CTU04-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Oct-17
2
Document Number: 96232
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 50 A/μA, V
R
= 30 V - 35 60
nsT
J
= 25 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-43-
T
J
= 125 °C - 67 -
Peak recovery current I
RRM
T
J
= 25 °C - 2.8 -
A
T
J
= 125 °C - 6.3 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 60 -
nC
T
J
= 125 °C - 210 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction to case per leg
R
thJC
-1.82.0
°C/W
Thermal resistance,
junction to ambient per leg
R
thJA
Typical socket mount - - 50
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and
greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style D
2
PAK (TO-263AB) 16CTU04S
Case style TO-262AA 16CTU04-1
1
10
100
0 1.5
1.00.5
2.0 2.5
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
0.1
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400
0.0001
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
VS-16CTU04S-M3, VS-16CTU04-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Oct-17
3
Document Number: 96232
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
T
J
= 25 °C
0
100 200 300 400
1000
100
10
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
1
See note (1)
Square wave (D = 0.50)
Rated V
R
applied
DC
02468 1210
180
170
160
150
140
130
I
F(AV)
Average Forward Current (A)
Allowable Case Temperature (°C)
02468 1210
14
8
6
4
2
0
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
12
10

VS-16CTU04STRL-M3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 400V 2 x 8A IF TO-220AB 100A IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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