IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the
Intrinsic Diode
Figure 10. Transient Thermal Resistance
IXFK50N50 IXFK55N50
IXFN50N50 IXFN55N50
Gate Charge - nC
0 50 100 150 200 250 300 350
V
GS
- Volts
0
2
4
6
8
10
12
V
DS
= 250V
I
D
= 27.5A
V
DS
- Volts
0 5 10 15 20 25 30 35 40
Capacitance - pF
100
1000
10000
Crss
Coss
Ciss
f = 1MHz
V
SD
- Volts
0.2 0.4 0.6 0.8 1.0
I
D
- Amperes
0
20
40
60
80
100
T
J
= 125
O
C
T
J
= 25
O
C
Pulse Width - Seconds
10
-4
10
-3
10
-2
10
-1
10
0
10
1
R(th)
JC
- K/W
0.00
0.01
0.10
1.00
