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BUK6246-75C,118

P1-P3P4-P6P7-P9P10-P12P13-P15
BUK6246-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 13 July 2011 6 of 14
NXP Semiconductors
BUK6246-75C
N-channel TrenchMOS intermediate level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=250µA; V
GS
=0V; T
j
=25°C 75--V
I
D
=250µA; V
GS
=0V; T
j
= -55 °C 68 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 9; see Figure 10
1.8 2.3 2.8 V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 9
--3.3V
I
D
=1mA; V
DS
=V
GS
; T
j
= 175 °C;
see Figure 9
0.8--V
I
DSS
drain leakage current V
DS
=75V; V
GS
=0V; T
j
= 175 °C - - 500 µA
V
DS
=75V; V
GS
=0V; T
j
= 25 °C - 0.02 1 µA
I
GSS
gate leakage current V
GS
=20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=10A; T
j
=25°C;
see Figure 11
- 3946mΩ
V
GS
=4.5V; I
D
=10A; T
j
=25°C;
see Figure 11
- 47.2 64 mΩ
V
GS
=5V; I
D
=10A; T
j
=25°C;
see Figure 11
- 44.4 56 mΩ
V
GS
=10V; I
D
=10A; T
j
= 175 °C;
see Figure 11
; see Figure 12
- - 120 mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=60V; V
GS
=10V;
see Figure 13
; see Figure 14
- 21.4 - nC
I
D
=25A; V
DS
=60V; V
GS
=5V;
see Figure 13; see Figure 14
- 11.8 - nC
Q
GS
gate-source charge I
D
=25A; V
DS
=60V; V
GS
=10V;
see Figure 13
; see Figure 14
-3.76-nC
Q
GD
gate-drain charge - 6.84 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C; see Figure 15
- 955 1280 pF
C
oss
output capacitance - 84 101 pF
C
rss
reverse transfer
capacitance
- 6386pF
t
d(on)
turn-on delay time V
DS
=55V; R
L
=2.2Ω; V
GS
=10V;
R
G(ext)
=10Ω
-9.5-ns
t
r
rise time - 17.8 - ns
t
d(off)
turn-off delay time - 37 - ns
t
f
fall time - 35 - ns
L
D
internal drain
inductance
from upper edge of drain mounting base
to centre of die; T
j
=25°C
-3.5-nH
L
S
internal source
inductance
from source lead to source bond pad;
T
j
=25°C
-7.5-nH
BUK6246-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 13 July 2011 7 of 14
NXP Semiconductors
BUK6246-75C
N-channel TrenchMOS intermediate level FET
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 16
-0.91.2V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=0V;
V
DS
=25V
-42-ns
Q
r
recovered charge - 64 - nC
Table 6. Characteristics …continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BUK6246-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 13 July 2011 8 of 14
NXP Semiconductors
BUK6246-75C
N-channel TrenchMOS intermediate level FET
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aad804
0
0.5
1
1.5
2
2.5
3
-60 0 60 120 180
T
j
(
°
C)
a
P1-P3P4-P6P7-P9P10-P12P13-P15

BUK6246-75C,118

Mfr. #:
Buy BUK6246-75C,118
Manufacturer:
Nexperia
Description:
RF Bipolar Transistors MOSFET N-Chan 75V 22A 60W
Lifecycle:
New from this manufacturer.
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