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SI4472DY-T1-GE3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 74283
S11-0209-Rev. C, 14-Feb-11
Vishay Siliconix
Si4472DY
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
0.01
0.001
V
SD
- Source-to-Drain Voltage (V)
-
(A)
t
ner
r
u
C
e
cru
o
S I
S
1.2
10.80.60.40.20
100
10
1
T
J
= 25 °C
T
J
= 150 °C
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.04
0.08
0.12
0.16
0.20
02468 10
V
GS
- Gate-to-Source Voltage (V)
R
)no(SD
(Ω) ecnatsiseR-nO ecruoS-ot-niarD-
I
D
= 5 A
= 125 °C
J
T
T
J
= 25 °C
0
120
200
40
80
)W(
rewoP
Time (s)
160
1100.10.010.001
Safe Operating Area, Junction-to-Ambient
* V
GS
minimum V
GS
at which R
DS(on)
is specified
100
0.01
10
)
A(
tn
e
r
r
uC
niarD
-I
D
0.1
V
DS
- Drain-to-Source Voltage (V)
1
0.01
0.1
1
10
100
1000
T
A
= 25 °C
Single Pulse
1 s
10 s
DC
10 ms
100 ms
1 ms
Limited by R
DS(on)*
Document Number: 74283
S11-0209-Rev. C, 14-Feb-11
www.vishay.com
5
Vishay Siliconix
Si4472DY
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
5
7
9
0 255075100125150
I
D
)A( tnerruC niarD-
T
C
- Case Temperature (°C)
Power, Junction-to-Case
0.0
1.6
3.2
4.8
6.4
8.0
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2
.
0
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
r (W)
ew
o
P
www.vishay.com
6
Document Number: 74283
S11-0209-Rev. C, 14-Feb-11
Vishay Siliconix
Si4472DY
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74283
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
10
-1
100
Square Wave Pulse Duration (s)
10
1000
1
0.1
0.01
tneisnarT evitceffE dezilamroN
ecnadepmI lamrehT
1
10
-4
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Notes:
t
1
P
DM
t
2
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
1
0.1
0.01
Square Wave Pulse Duration (s)
tneisnar
T
ev
i
t
cef
fE
d
e
zi
l
am
r
oN
ecnadepmI
l
amrehT
-4
10
0.2
0.05
Single Pulse
Duty Cycle = 0.5
0.02
10
-2
10
-1
1
P1-P3P4-P6P7-P9

SI4472DY-T1-GE3

Mfr. #:
Buy SI4472DY-T1-GE3
Manufacturer:
Vishay
Description:
IGBT Transistors MOSFET 150V 7.7A 5.9W 45mohm @ 10V
Lifecycle:
New from this manufacturer.
Delivery:
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