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IXDE509PI

P1-P3P4-P6P7-P9P10-P12P13-P14
First Release
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOS
TM
processes
• Latch-Up Protected up to 9 Amps
• High 9A peak output current
• Wide operating range: 4.5V to 30V
• -55°C to +125°C Extended operating
temperature
• Ability to disable output under faults
• High capacitive load drive capability:
1800pF in <15ns
• Matched rise and fall times
• Low propagation delay time
• Low output impedance
• Low supply current
Applications
• Driving MOSFETs and IGBTs
• Limiting di/dt under short circuit
• Motor controls
• Line drivers
• Pulse generators
• Local power ON/OFF switch
• Switch mode power supplies (SMPS)
• DC to DC converters
• Pulse transformer driver
• Class D switching amplifiers
• Power charge pumps
General Description
The IXDD509 and IXDE509 are high speed high current gate
drivers specifically designed to drive the largest IXYS
MOSFETs & IGBTs to their minimum switching time and
maximum parctical frequency limits. The IXDD509 and
IXDE509 can source and sink 9 Amps of Peak Current
while producing voltage rise and fall times of less than
30ns. The inputs of the Drivers are compatible with TTL or
CMOS and are virtually immune to latch up over the entire
operating range. Patented* design innovations eliminate
cross conduction and current "shoot-through". Improved
speed and drive capabilities are further enhanced by
matched rise and fall times.
The IXDD509 and IXDE509 incorporate a unique ability to
disable the output under fault conditions. When a logical
low is forced into the Enable input, both final output stage
MOSFETs, (NMOS and PMOS) are turned off. As a result,
the output of the IXDD509 or IXDE509 enters a tristate high
impedance mode and with additional circuitry, achieves a
Soft Turn-Off of the MOSFET/IGBT when a short circuit is
detected. This helps prevent damage that could occur to
the MOSFET/IGBT if it were to be switched off abruptly due
to a dv/dt over-voltage transient.
The IXDD509 and IXDE509 are available in the 8-Pin P-DIP
(PI) package, the 8-Pin SOIC (SIA) package, and the 6-
Lead DFN (D1) package, (which occupies less than 65% of
the board area of the 8-Pin SOIC).
*United States Patent 6,917,227
Ordering Information
Part Number Description
Package
Type
Packing Style
Pack
Qty
Configuration
IXDD509PI 9A Low Side Gate Driver I.C. 8-Pin PDIP Tube 50
IXDD509SIA 9A Low Side Gate Driver I.C. 8-Pin SOIC Tube 94
IXDD509SIAT/R 9A Low Side Gate Driver I.C. 8-Pin SOIC 13” Tape and Reel 2500
IXDD509D1 9A Low Side Gate Driver I.C. 6-Lead DFN 2” x 2” Waffle Pack 56
IXDD509D1T/R 9A Low Side Gate Driver I.C. 6-Lead DFN 13” Tape and Reel 2500
Non-Inverting
with Enable
IXDE509PI 9A Low Side Gate Driver I.C. 8-Pin PDIP Tube 50
IXDE509SIA 9A Low Side Gate Driver I.C. 8-Pin SOIC Tube 94
IXDE509SIAT/R 9A Low Side Gate Driver I.C. 8-Pin SOIC 13” Tape and Reel 2500
IXDE509D1 9A Low Side Gate Driver I.C. 6-Lead DFN 2” x 2” Waffle Pack 56
IXDE509D1T/R 9A Low Side Gate Driver I.C. 6-Lead DFN 13” Tape and Reel 2500
Inverting
with Enable
DS99679A(10/07)
NOTE: All parts are lead-free and RoHS Compliant
Copyright © 2007 IXYS CORPORATION All rights reserved
9 Ampere Low-Side Ultrafast MOSFET Drivers
with Enable for fast, controlled shutdown
IXDD509 / IXDE509
2
Copyright © 2007 IXYS CORPORATION All rights reserved
IXDD509 / IXDE509
Figure 1 - IXDD509 9A Non-Inverting Gate Driver Functional Block Diagram
Figure 2 - IXDE509 Inverting 9A Gate Driver Functional Block Diagram
* United States Patent 6,917,227
*
N
P
OUT
Vcc
IN
ANTI-CROSS
CONDUCTION
CIRCUIT *
GND
GND
Vcc
EN
200 K
N
P
OUT
Vcc
IN
ANTI-CROSS
CONDUCTION
CIRCUIT *
GND
GND
Vcc
EN
200 K
*
3
IXDD509 / IXDE509
IXYS reserves the right to change limits, test conditions, and dimensions.
Unless otherwise noted, 4.5V ≤ V
CC
≤ 30V .
All voltage measurements with respect to GND. IXD_509 configured as described in Test Conditions.
Electrical Characteristics @ T
A
= 25
o
C
(3)
Symbol Parameter Test Conditions Min Typ Max Units
V
IH
, V
ENH
High input & EN voltage
4.5V ≤ V
CC
≤ 18V
2.4 V
V
IL
, V
ENL
Low input & EN voltage
4.5V ≤ V
CC
≤ 18V
0.8 V
V
IN
Input voltage range -5 V
CC
+ 0.3 V
V
EN
Enable voltage range -.3 V
CC
+ 0.3 V
I
IN
Input current
0V ≤ V
IN
≤ V
CC
-10 10
µA
V
OH
High output voltage V
CC
- 0.025 V
V
OL
Low output voltage 0.025 V
R
OH
High state output
resistance
V
CC
= 18V
0.6 1
Ω
R
OL
Low state output
resistance
V
CC
= 18V
0.4 0.8
Ω
I
PEAK
Peak output current V
CC
= 15V 9 A
I
DC
Continuous output current
Limited by package power
dissipation
2 A
t
R
Rise time C
LOAD
=10,000pF V
CC
=18V
25 45
ns
t
F
Fall time C
LOAD
=10,000pF V
CC
=18V
23 40
ns
t
ONDLY
On-time propagation
delay
C
LOAD
=10,000pF V
CC
=18V 18 35 ns
t
OFFDLY
Off-time propagation
delay
C
LOAD
=10,000pF V
CC
=18V 19 30 ns
t
ENOH
Enable to output high
delay time
V
CC
=18V 25 50 ns
t
DOLD
Disable to output high
impedance delay time
V
CC
=18V 60 80 ns
V
CC
Power supply voltage 4.5 18 30 V
I
CC
Power supply current V
CC
= 18V, V
IN
= 0V
V
IN
= 3.5V
V
IN
= V
CC
1
75
3
75
µA
mA
mA
Absolute Maximum Ratings
(1)
Operating Ratings
(2)
Parameter Value
Supply Voltage 35 V
All Other Pins (unless specified -0.3 V to V
CC
+ 0.3V
otherwise)
Junction Temperature 150 °C
Storage Temperature -65 °C to 150 °C
Lead Temperature (10 Sec) 300 °C
Parameter Value
Operating Supply Voltage 4.5V to 30V
Operating Temperature Range -55 °C to 125 °C
(4)
Package Thermal Resistance *
8-Pin PDIP (PI)
θ
J-A
(typ) 125 °C/W
8-Pin SOIC (SIA)
θ
J-A
(typ) 200 °C/W
6-Lead DFN (D1)
θ
J-A
(typ) 125-200 °C/W
6-Lead DFN (D1)
θ
J-C
(max) 2.0 °C/W
6-Lead DFN (D1)
θ
J-S
(typ) 6.3 °C/W
P1-P3P4-P6P7-P9P10-P12P13-P14

IXDE509PI

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Description:
IC GATE DRIVER 9A 8-DIP
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