MC74VHCT139ADT

Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 1
1 Publication Order Number:
MC74VHCT139A/D
MC74VHCT139A
Product Preview
Dual 2-to-4 Decoder/
Demultiplexer
The MC74VHCT139A is an advanced high speed CMOS 2–to–4
decoder/ demultiplexer fabricated with silicon gate CMOS technology. It
achieves high speed operation similar to equivalent Bipolar Schottky
TTL devices while maintaining CMOS low power dissipation.
When the device is enabled (E
= low), it can be used for gating or as a
data input for demultiplexing operations. When the enable input is held
high, all four outputs are fixed high, independent of other inputs.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output.
The device output is compatible with TTL–type input thresholds and
the output has a full 5 V CMOS level output swing. The input protection
circuitry on this device allows overvoltage tolerance on the input,
allowing the device to be used as a logic–level translator from 3.0 V
CMOS logic to 5.0 V CMOS logic, or from 1.8 V CMOS logic to 3.0 V
CMOS logic while operating at the high–voltage power supply
The MC74VHCT139A input structure provides protection when
voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHCT139A to be used to interface 5 V circuits to 3 V
circuits. The output structures also provide protection when V
CC
= 0 V.
These input and output structures help prevent device destruction caused
by supply voltage—input/output voltage mismatch, battery backup, hot
insertion, etc.
High Speed: t
PD
= 5.0ns (Typ) at V
CC
= 5V
Low Power Dissipation: I
CC
= 4µΑ (Max) at T
A
= 25°C
TTL–Compatible Inputs: V
IL
= 0.8 V; V
IH
= 2.0 V
Power Down Protection Provided on Inputs and Outputs
Balanced Propagation Delays
Designed for 2V to 5.5V Operating Range
Low Noise: V
OLP
= 0.8 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300mA
ESD Performance: HBM > 2000V; Machine Model > 200V
Chip Complexity: 100 FETs or 25 Equivalent Gates
Figure 1. Pin Assignment
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Ea
A1a
A0a
GND
A1b
A0b
Eb
V
CC
Y0a
Y1a
Y2a
Y3a
Y0b
Y1b
Y2b
Y3b
http://onsemi.com
SOIC–16
D SUFFIX
CASE 751B
MARKING DIAGRAMS
1
8
9
16
1
8
16 9
1
16 9
8
VHCT139A
AWLYYWW
A = Assembly Location
L, WL = Wafer Lot
Y, YY = Year
W, WW = Work Week
VHCT139A
AWLYWW
VHCT139A
ALYW
TSSOP–16
DT SUFFIX
CASE 948F
SOIC EIAJ–16
M SUFFIX
CASE 966
Device Package Shipping
ORDERING INFORMATION
MC74VHCT139AD SOIC–16 48 Units/Rail
MC74VHCT139ADR2 SOIC–16 2500 Units/Reel
MC74VHCT139ADT TSSOP–16 96 Units/Rail
TSSOP–16 2000 Units/Reel
MC74VHCT139AM
SOIC
EIAJ–16
48 Units/Rail
MC74VHCT139AMEL
SOIC
EIAJ–16
2000 Units/Reel
MC74VHCT139ADTR2
MC74VHCT139A
http://onsemi.com
2
Figure 2. Logic Diagram
A0a
A1a
Ea
A0b
A1b
1
Eb
Y0a
Y1a
Y2a
Y3a
Y0b
Y1b
Y2b
Y3b
ACTIVE-LOW
OUTPUTS
ADDRESS
INPUTS
ACTIVE-LOW
OUTPUTS
3
2
ADDRESS
INPUTS
13
14
15
4
5
6
7
12
11
10
9
FUNCTION TABLE
Inputs Outputs
E
A1 A0 Y0 Y1 Y2 Y3
HXXHHHH
LLLLHHH
LLHHLHH
LHLHHLH
LHHHHHL
En
A0
A1
Y0
Y1
Y2
Y3
Figure 3. Expanded Logic Diagram
(1/2 of Device)
INPUT
Figure 4. Input Equivalent Circuit
4
Figure 5. IEC Logic Diagram
Y0a
Y1a
Y2a
Y3a
Y0b
Y1b
Y2b
Y3b
5
6
7
12
11
10
9
15
14
13
1
2
3
A1a
A0a
Ea
A1b
A0b
Eb
2
1
EN
X/Y
1
0
2
3
0
1
DMUX
1
0
2
3
G
0
3
15
14
13
1
2
3
A1a
A0a
Ea
A1b
A0b
Eb
Y0a
Y1a
Y2a
Y3a
Y0b
Y1b
Y2b
Y3b
4
5
6
7
12
11
10
9
MC74VHCT139A
http://onsemi.com
3
MAXIMUM RATINGS (Note 1.)
Symbol
Parameter Value Unit
V
CC
Positive DC Supply Voltage –0.5 to +7.0 V
V
IN
Digital Input Voltage –0.5 to +7.0 V
V
OUT
DC Output Voltage Output in 3–State
High or Low State
–0.5 to +7.0
–0.5 to V
CC
+0.5
V
I
IK
Input Diode Current –20 mA
I
OK
Output Diode Current 20 mA
I
OUT
DC Output Current, per Pin 25 mA
I
CC
DC Supply Current, V
CC
and GND Pins 75 mA
P
D
Power Dissipation in Still Air SOIC Package
TSSOP
200
180
mW
T
STG
Storage Temperature Range –65 to +150 °C
V
ESD
ESD Withstand Voltage Human Body Model (Note 2.)
Machine Model (Note 3.)
Charged Device Model (Note 4.)
>2000
>200
>2000
V
I
LATCH–UP
Latch–Up Performance Above V
CC
and Below GND at 125°C (Note 5.) 300 mA
JA
Thermal Resistance, Junction to Ambient SOIC Package
TSSOP
143
164
°C/W
1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the
Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol Characteristics Min Max Unit
V
CC
DC Supply Voltage 4.5 5.5 V
V
IN
DC Input Voltage 0 5.5 V
V
OUT
DC Output Voltage Output in 3–State
High or Low State
0
0
5.5
V
CC
V
T
A
Operating Temperature Range, all Package Types –55 125 °C
t
r
, t
f
Input Rise or Fall Time V
CC
= 5.0 V + 0.5 V 0 20 ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
TIME, YEARS
NORMALIZED FAILURE RATE
T
J
= 80
C°
T
J
= 90
C°
T
J
= 100 C°
T
J
= 110 C°
T
J
= 130 C°
T
J
= 120 C°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 6. Failure Rate vs. Time Junction Temperature

MC74VHCT139ADT

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Encoders, Decoders, Multiplexers & Demultiplexers 5V Dual 2-to-4
Lifecycle:
New from this manufacturer.
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