SSM3J56ACT
4
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
= -10 V, V
GS
= -4.5 V,
I
D
= -800 mA
Min
Typ.
1.6
0.2
0.4
Max
Unit
nC
5.5.
5.5.
5.5.
5.5. Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Diode forward voltage (Note 1)
Symbol
V
DSF
Test Condition
I
D
= 1.4 A, V
GS
= 0 V
Min
Typ.
1.0
Max
1.3
Unit
V
Note 1: Pulse measurement.
6.
6.
6.
6. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 6.1
6.1
6.1
6.1 Marking
Marking
Marking
Marking
7.
7.
7.
7. Equivalent Circuit
Equivalent Circuit
Equivalent Circuit
Equivalent Circuit
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 Equivalent Circuit
Equivalent Circuit
Equivalent Circuit
Equivalent Circuit
2016-09-13
Rev.2.0
©2015 Toshiba Corporation