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PBSS4250X,115

P1-P3P4-P6P7-P9P10-P10
2004 Nov 08 3
NXP Semiconductors Product data sheet
50 V, 2 A
NPN low V
CEsat
(BISS) transistor
PBSS4250X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm
2
.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm
2
.
4. Device mounted on a ceramic printed-circuit board 7 cm
2
, single-sided copper, tin-plated.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 50 V
V
CEO
collector-emitter voltage open base − 50 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) − 2 A
I
CM
peak collector current limited by T
j(max)
− 5 A
I
B
base current (DC) − 0.5 A
P
tot
total power dissipation T
amb
≤ 25 °C
note 1 − 550 mW
note 2 − 1 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient in free air
note 1 225 K/W
note 2 125 K/W
note 3 90 K/W
note 4 80 K/W
R
th(j-s)
thermal resistance from junction to soldering point 16 K/W
2004 Nov 08 4
NXP Semiconductors Product data sheet
50 V, 2 A
NPN low V
CEsat
(BISS) transistor
PBSS4250X
006aaa243
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle =
1.00
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
0
Fig.2 Transient thermal impedance as a function of pulse time; typical values.
Mounted on FR4 printed-circuit board; standard footprint.
006aaa244
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle =
1.00
0.75
0.50
0.20
0.05
0.02
0.01
0
0.33
0.10
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm
2
.
2004 Nov 08 5
NXP Semiconductors Product data sheet
50 V, 2 A
NPN low V
CEsat
(BISS) transistor
PBSS4250X
006aaa245
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle =
1.00
0.75
0.50
0.20
0.05
0.02
0.01
0
0.33
0.10
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm
2
.
P1-P3P4-P6P7-P9P10-P10

PBSS4250X,115

Mfr. #:
Buy PBSS4250X,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS BISS TAPE-7
Lifecycle:
New from this manufacturer.
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