VS-10TQ035SHM3, VS-10TQ045SHM3
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Vishay Semiconductors
Revision: 06-Mar-14
1
Document Number: 94962
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High Performance Schottky Rectifier, 10 A
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified meets JESD 201 class 1A whisker
test
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10TQ...SHM3 Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 175 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
10 A
V
R
35 V, 45 V
V
F
at I
F
0.49 V
I
RM
max. 15 mA at 125 °C
T
J
max. 175 °C
E
AS
13 mJ
Package TO-263AB (D
2
PAK)
Diode variation Single die
Anode
1
3
Base
cathode
2
N/C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 10 A
V
RRM
35/45 V
I
FSM
t
p
= 5 μs sine 1050 A
V
F
10 A
pk
, T
J
= 125 °C 0.49 V
T
J
Range -55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10TQ035SHM3 VS-10TQ045SHM3 UNITS
Maximum DC reverse voltage V
R
35 45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 151 °C, rectangular waveform 10 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
1050
A
10 ms sine or 6 ms rect. pulse 280
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 6.5 mH 13 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2A
