STPS30170CG-TR

®
1/9
Table 1: Main Product Characteristics
I
F(AV)
2 x 15 A
V
RRM
170 V
T
j
175 °C
V
F
(max)
0.75 V
STPS30170C
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
REV. 1
K
A1
A2
A1
K
A2
TO-247
STPS30170CW
A1
K
A2
A1
K
A2
A1
K
A2
TO-220AB
STPS30170CT
TO-220FPAB
STPS30170CFP
D
2
PAK
STPS30170CG
September 2005
FEATURES AND BENEFITS
High junction temperature capability
Low leakage current
Good trade off between leakage current and
forward voltage drop
Insulated package: TO-220FPAB
Insulating voltage: 2000 V DC
Capacitance: 45 pF
Avalanche specification
DESCRIPTION
Dual center tab Schottky rectifier suited for High
Frequency Switch Mode Power Supply.
Table 2: Order Codes
Part Numbers Marking
STPS30170CW STPS30170CW
STPS30170CT STPS30170CT
STPS30170CFP STPS30170CFP
STPS30170CG STPS30170CG
STPS30170CG-TR STPS30170CG
STPS30170C
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Table 3: Absolute Ratings (limiting values, per diode)
Table 4: Thermal Parameters
Table 5: Static Electrical Characteristics (per diode)
Pulse test: * tp = 5 ms, δ < 2%
** tp = 380 µs,
δ < 2%
To evaluate the conduction losses use the following equation: P = 0.64 x I
F(AV)
+ 0.0073 I
F
2
(RMS)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 170 V
I
F(RMS)
RMS forward current 30 A
I
F(AV)
Average forward current
δ = 0.5
TO-220FPAB Tc = 120 °C
Per diode
Per device
15
A
TO-220AB /
D
2
PAK
Tc = 155 °C
TO-247 30
I
FSM
Surge non repetitive forward current tp = 10ms sinusoidal 220 A
P
ARM
Repetitive peak avalanche power tp = 1µs Tj = 25 °C 10500 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature * 175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
* : thermal runaway condition for a diode on its own heatsink
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220FPAB
Per diode
Total
4
3.3
°C/W
TO-220AB / D
2
PAK
Per diode
Total
1.6
0.85
TO-247
Per diode
Total
1.5
0.8
R
th(c)
TO-220FPAB Coupling 2.6
°C/W
TO-220AB / D
2
PAK
Coupling 0.3
TO-247 Coupling 0.3
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Symbol Parameter Tests conditions Min. Typ Max. Unit
I
R
*
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
20 µA
T
j
= 125 °C
520 mA
V
F
**
Forward voltage drop
T
j
= 25 °C
I
F
= 15 A
0.92
V
T
j
= 125 °C
0.69 0.75
T
j
= 25 °C
I
F
= 30 A
1
T
j
= 125 °C
0.80 0.86
dPtot
dTj
---------------
1
Rth j a()
-------------------------->
STPS30170C
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Figure 1: Average forward power dissipation
versus average forward current (per diode)
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
Figure 3: Normalized avalanche power
derating versus pulse duration
Figure 4: Normalized avalanche power
derating versus junction temperature
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB, TO-247, D
2
PAK)
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220FPAB)
0
2
4
6
8
10
12
14
0123456789101112131415161718
P
F(AV)
(W)
d=0.05
d=0.1
d=0.2 d=0.5
d=1
T
d
=t /T
p
t
p
I
F(AV)
(A)
0
2
4
6
8
10
12
14
16
18
0 25 50 75 100 125 150 175
I
F(AV)
(A)
R
th(j-A)
=15 °C/W
T
d
=t /T
p
t
p
R
th(j-a)
=R
th(j-c)
(TO-220AB, TO -247 & D²PAK)R
th(j-a)
=R
th(j-c)
(TO-220AB, TO-247 & D²PAK)
R
th(j-a)
=R
th(j-c)
(TO-220FPAB)
R
th(j-a)
=R
th(j-c)
(TO-220FPAB)
T
amb
(°C)
0.001
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t)
P (1µs)
ARM p
ARM
0
0.2
0.4
0.6
0.8
1
1.2
25
50 75 100 125 150
T (°C)
j
P(t)
P (25°C)
ARM p
ARM
0
25
50
75
100
125
150
175
200
225
1.E-03 1.E-02 1.E-01 1.E+0
0
I
M
(
A
)
T
C
=50°C
T
C
=75°C
T
C
=125°C
I
M
t
d
=0.5
TO-220AB, TO -247 & D²PAK
t(s)
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
1.E-03 1.E-02 1.E-01 1.E+0
0
I
M
(
A
)
T
C
=50°C
T
C
=75°C
T
C
=125°C
I
M
t
d
=0.5
TO-220FPAB
t(s)

STPS30170CG-TR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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