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VESD03-02V-G-08

P1-P3P4-P5
VESDxx-02V
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 20-Jun-12
1
Document Number: 83367
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Single ESD-Protection Diode in SOD-523
MARKING (example only)
Bar = cathode marking
X = date code
Y = type code (see table below)
FEATURES
• Single-line ESD-protection
• Low leakage current
• ESD-immunity acc. IEC 61000-4-2
± 8 kV contact discharge
± 15 kV air discharge
•e3 - Sn
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
19344
20278
1
2
20279
XY
ORDERING INFORMATION
DEVICE NAME ORDERING CODE
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
MINIMUM ORDER QUANTITY
VESD01-02V VESD01-02V-G-08 3000 3000
VESD03-02V VESD03-02V-G-08 3000 3000
VESD05-02V VESD05-02V-G-08 3000 3000
VESD08-02V VESD08-02V-G-08 3000 3000
VESD12-02V VESD12-02V-G-08 3000 3000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VESD01-02V SOD-523 . 1.4 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
VESD03-02V SOD-523 . 1.4 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
VESD05-02V SOD-523 . 1.4 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
VESD08-02V SOD-523 . 1.4 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
VESD12-02V SOD-523 . 1.4 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
A
B
C
D
E
VESDxx-02V
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 20-Jun-12
2
Document Number: 83367
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS VESD01-02V
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I
PPM
7A
Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P
PP
63 W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
V
ESD
± 8 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV
Operating temperature Junction temperature T
J
- 40 to + 125 °C
Storage temperature T
stg
- 55 to + 150 °C
ABSOLUTE MAXIMUM RATINGS VESD03-02V
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I
PPM
9A
Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P
PP
108 W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
V
ESD
± 8 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV
Operating temperature Junction temperature T
J
- 40 to + 125 °C
Storage temperature T
stg
- 55 to + 150 °C
ABSOLUTE MAXIMUM RATINGS VESD05-02V
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I
PPM
6A
Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P
PP
120 W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
V
ESD
± 8 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV
Operating temperature Junction temperature T
J
- 40 to + 125 °C
Storage temperature T
stg
- 55 to + 150 °C
ABSOLUTE MAXIMUM RATINGS VESD08-02V
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I
PPM
4A
Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P
PP
120 W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
V
ESD
± 8 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV
Operating temperature Junction temperature T
J
- 40 to + 125 °C
Storage temperature T
stg
- 55 to + 150 °C
ABSOLUTE MAXIMUM RATINGS VESD12-02V
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot I
PPM
2A
Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot P
PP
25 W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
V
ESD
± 8 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV
Operating temperature Junction temperature T
J
- 40 to + 125 °C
Storage temperature T
stg
- 55 to + 150 °C
VESDxx-02V
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 20-Jun-12
3
Document Number: 83367
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL CHARACTERISTICS VESD01-02V
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--1V
Reverse voltage at I
R
= 100 μA V
R
1--V
Reverse current at V
R
= 1 V I
R
- - 100 μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
1.5 - - V
Reverse clamping voltage at I
PP
(see fig. 1) V
C
-9-V
Capacitance at V
R
= 0 V; f = 1 MHz C
D
-180- pF
ELECTRICAL CHARACTERISTICS VESD03-02V
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--3V
Reverse voltage at I
R
= 20 μA V
R
3--V
Reverse current at V
R
= 3 V I
R
- - 20 μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
4--V
Reverse clamping voltage at I
PP
(see fig. 1) V
C
-12- V
Capacitance at V
R
= 0 V; f = 1 MHz C
D
-110- pF
ELECTRICAL CHARACTERISTICS VESD05-02V
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--5V
Reverse voltage at I
R
= 0.1 μA V
R
5--V
Reverse current at V
R
= 5 V I
R
--0.1μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
6.5 - - V
Reverse clamping voltage at I
PP
(see fig. 1) V
C
-20- V
Capacitance at V
R
= 0 V; f = 1 MHz C
D
-55-pF
ELECTRICAL CHARACTERISTICS VESD08-02V
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--8V
Reverse voltage at I
R
= 0.1 μA V
R
8--V
Reverse current at V
R
= 8 V I
R
--0.1μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
9--V
Reverse clamping voltage at I
PP
(see fig. 1) V
C
-30- V
Capacitance at V
R
= 0 V; f = 1 MHz C
D
-35-pF
ELECTRICAL CHARACTERISTICS VESD12-02V
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--12V
Reverse voltage at I
R
= 0.1 μA V
R
12 - - V
Reverse current at V
R
= 12 V I
R
--0.1μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
14 - - V
Reverse clamping voltage at I
PP
(see fig. 1) V
C
-25- V
Capacitance at V
R
= 0 V; f = 1 MHz C
D
-30-pF
P1-P3P4-P5

VESD03-02V-G-08

Mfr. #:
Buy VESD03-02V-G-08
Manufacturer:
Vishay Semiconductors
Description:
TVS Diodes / ESD Suppressors 3.0 Volt 9.0 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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