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CRS08(TE85L,Q,M)

P1-P3P4-P5
CRS08
2013-11-01
1
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS08
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
• Forward voltage: V
FM
= 0.36 V (max)
• Average forward current: I
F (AV)
= 1.5 A
• Repetitive peak reverse voltage: V
RRM
= 30 V
• Suitable for compact assembly due to small surface-mount package
“S−FLAT
TM
” (Toshiba package name)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Repetitive peak reverse voltage V
RRM
30 V
Average forward current I
F (AV)
1.5 (Note 1) A
Peak one cycle surge forward current
(non-repetitive)
I
FSM
30 (50 Hz) A
Junction temperature T
j
−40~125 °C
Storage temperature T
stg
−40~150 °C
Note 1: Tℓ = 86°C: Rectangular waveform (α = 180°), V
R
= 15 V
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
V
FM (1)
I
FM
= 0.1 A ⎯ 0.23 ⎯
V
FM (2)
I
FM
= 1.0 A ⎯ 0.32 ⎯
Peak forward voltage
V
FM (3)
I
FM
= 1.5 A ⎯ 0.345 0.36
V
I
RRM (1)
V
RRM
= 5 V ⎯ 50 ⎯ μA
Repetitive peak reverse current
I
RRM (2)
V
RRM
= 30 V ⎯ ⎯ 1.0 mA
Junction capacitance C
j
V
R
= 10 V, f = 1.0 MHz ⎯ 90 ⎯ pF
Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm)
⎯ ⎯ 70
Thermal resistance (junction to ambient) R
th (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm × 6 mm)
⎯ ⎯ 140
°C/W
Thermal resistance (junction to lead) R
th (j-ℓ)
⎯ ⎯ ⎯ 20 °C/W
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 3-2A1A
Weight: 0.013 g (typ.)
Start of commercial production
2000-06
CRS08
2013-11-01
2
Marking
Abbreviation Code Part No.
S8 CRS08
Standard Soldering Pad
Handling Precaution
Schottky barrier diodes have reverse current characteristic compared to the other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
This device is V
F
-I
RRM
trade-off type, lower V
F
higher I
RRM
; therefore, thermal runaway might occur when
voltage is applied. Please take forward and reverse loss into consideration during design.
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we recommend
when you design a circuit with a device.
V
RRM
: Use this rating with reference to the above. V
RRM
has a temperature coefficient of 0.1%/°C. Take
this temperature coefficient into account designing a device at low temperature.
I
F(AV)
: We recommend that the worst case current be no greater than 80% of the absolute maximum rating
of I
F(AV)
and T
j
be below 100°C. When using this device, take the margin into consideration by
using an allowable Tamax-I
F(AV)
curve.
I
FSM
: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
T
j
: Derate this rating when using a device in order to ensure high reliability. We recommend that the
device be used at a T
j
of below 100°C.
Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When
using a device, please design a circuit board and a soldering land size to match the appropriate thermal resistance
value.
Please refer to the Rectifiers databook for further information.
2.8
1.2
1.2
Unit: mm
CRS08
2013-11-01
3
Time t (ms)
r
th (j-a)
– t
Instantaneous forward voltage v
F
(V)
i
F
– v
F
Instantaneous forward current i
F
(A)
Average forward current I
F (AV)
(A)
P
F (AV)
– I
F (AV)
Average forward current I
F (AV)
(A)
Tℓ max – I
F (AV)
Number of cycles
Surge forward current
(non-repetitive)
Peak surge forward current I
FSM
(A)
10
0 0.3 0.1 0.2 0.8 0.6 0.4 0.5 0.7
1
0.1
0.01
0.3
0.03
3
T
j
= 125°C
75°C
25°C
Ta = 25°C
f = 50 Hz
Reverse voltage V
R
(V)
C
j
– V
R
(typ.)
Junction capacitance C
j
(pF)
30
1
100
1000
300
500
50
3 10 30 5 50 100
f = 1 MHz
Ta = 25°C
10
0
0.2
0.7
0.1
0.3
0.5
0.4
0.6
0 0.4 0.8 1.2 2.0 2.41.6
0° 360°
Rectangular
waveform
α
Conduction angle
α
α = 60°
120°
180°
DC
Transient thermal impedance
r
th (j-a)
(°C/W)
Maximum allowable lead temperature
Tℓ MAX (°C)
10
1
100
1000
1 10 100 1000 10000 100000
10000
① Device mounted on a ceramic
board
Soldering land: 2 mm × 2 mm
② Device mounted on a glass-epoxy
board
Soldering land: 6 mm × 6 mm
②
①
30000
40
20
10
0
10 1 3 30 100 5 50
30
Average forward power dissipation
P
F (AV)
(W)
140
60
120
100
80
40
20
α
0 0.4 1.2 1.6 2.0 2.40.8
α = 60°
DC
180°
Rectangular
waveform
α
120°
360° 0°
V
R
= 15 V
I
F
(
AV
)
Conduction angle α
α
Rectangular
waveform
P1-P3P4-P5

CRS08(TE85L,Q,M)

Mfr. #:
Buy CRS08(TE85L,Q,M)
Manufacturer:
Toshiba
Description:
Schottky Diodes & Rectifiers Diode Schottky 30V, 1.5A
Lifecycle:
New from this manufacturer.
Delivery:
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